Investigations of solution variables in a contactless copper electrodeposition process for 3D packaging applications von Weber, C., Patterson, Z., Zhao, M., Balachandran, R., Gouk, R., Verhaverbeke, S., Shadman, F., Keswani, M.

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Spatially resolved electrical measurements of SiO2 gate oxides using atomic force microscopy von MURRELL, M. P, WELLAND, M. E, O'SHEA, S. J, WONG, T. M. H, BARNES, J. R, MCKINNON, A. W, HEYNS, M, VERHAVERBEKE, S

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(Invited) Supercritical Drying: A Sustainable Solution to Pattern Collapse of High-Aspect-Ratio and Low-Mechanical-Strength Device Structures von Chen, Han-Wen, Verhaverbeke, Steven, Gouk, Roman, Leschkies, Kurtis, Sun, Shiyu, Bekiaris, Nikos, Visser, Robert J.

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Surface reconstruction of hydrogen annealed (100) silicon von Bender, H., Verhaverbeke, S., Caymax, M., Vatel, O., Heyns, M. M.

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A Technique for Contactless Copper Electrodeposition for 3D Packaging Applications von Patterson, Z., Weber, C., Balachandran, R., Gouk, R., Verhaverbeke, S., Keswani, M.

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Generation at Point-of-Use of BHF von Liu, L.H., Verhaverbeke, Steven

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Reliability improvement of Cu/low-k interconnects by integrating novel single pass single wafer wet clean von Chang, R., Jianshe Tang, Verhaverbeke, S., Smekalin, K., Lee, J.T.C., Armacost, M.D.

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Development of an All-Wet-Etch Process Chemistry for the Patterning of Metal Conductors in Igzo Thin-Film-Transistors von Leschkies, Kurtis, Verhaverbeke, Steven, Yim, D. K., Hsu, H. C., Kim, H., Lim, R., White, J. M., Visser, Robert J.

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THE RELATIONSHIP OF THE SILICON SURFACE-ROUGHNESS AND GATE OXIDE INTEGRITY IN NH4OH/H2O2 MIXTURES von MEURIS, M, VERHAVERBEKE, S, MERTENS, PW, HEYNS, MM, HELLEMANS, L, BRUYNSERAEDE, Y, PHILIPOSSIAN, A

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Poly-gate structures manufactured in a cluster tool von Hendriks, M., de Blank, R., Lindow, E., Mulder, J., Granneman, E., Verhaverbeke, S., Vandervorst, W., Heyns, M.

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Using Megasonics for Particle and Residue Removal in Single Wafer Cleaning von Gouk, Roman, Verhaverbeke, Steven, Yost, Dennis

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Metallic Contamination Removal Evaluation for Single Wafer Processing von Boelen, Pieter, Levy, Didier, Garnier, Philippe, Verhaverbeke, Steven, Morinaga, Hitoshi

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Aqueous Based Single Wafer Cu/Low-k Cleaning Process Characterization and Integration into Dual Damascene Process Flow von Chen, Han Wen, Papanu, Jim, Hung, Raymond, Yost, Dennis, Tang, Jian She, Brown, Brian J., Verhaverbeke, Steven, Cai, Cathy

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Atomic force microscopy and infrared spectroscopy studies of hydrogen baked Si surfaces von VATEL, O, VERHAVERBEKE, S, BENDER, H, CAYMAX, M, CHOLLET, F, VERMEIRE, B, MERTENS, P, ANDRE, E, HEYNS, M

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Effect of Cl in gate oxidation von Mertens, Paul, McGeary, M.J, Schaekers, Marc, Sprey, Hessel, Vermeire, Bert, Depas, Michel, Meuris, Marc, Heyns, Marc

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Critical parameters for obtaining low particle densities on a Si surface in an HF-last process von ALAY, J.-L, VERHAVERBEKE, S, VANDERVORST, W, HEYNS, M

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The Relationship of the Silicon Surface Roughness and Gate Oxide Integrity in NH 4 OH/H 2 O 2 Mixtures von Meuris, M., Verhaverbeke, S., Mertens, P. W., Heyns, M. M., Hellemans, L., Bruynseraede, Y., Philipossian, A.

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Wet and dry HF-last cleaning process for high-integrity gate oxides von Werkhoven, Granneman, Hendriks, de Blank, Verhaverbeke, Mertens, Meuris, Vandervorst, Heijns, Philipossian

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Method of forming a barrier layer for through via applications von LESCHKIES, KURTIS, VERHAVERBEKE, STEVEN

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Contactless bottom-up electrodeposition of nickel for 3D integrated circuits von Zhao, Mingrui, Balachandran, Rajesh, Patterson, Zach, Gouk, Roman, Verhaverbeke, Steven, Shadman, Farhang, Keswani, Manish

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