Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications von Remesh, Nayana, Chandrasekar, Hareesh, Venugopalrao, Anirudh, Raghavan, Srinivasan, Rangarajan, Muralidharan, Nath, Digbijoy N.

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Study of the impact of interface traps associated with SiN X passivation on AlGaN/GaN MIS-HEMTs von Baby, Rijo, Venugopalrao, Anirudh, Chandrasekar, Hareesh, Raghavan, Srinivasan, Rangarajan, Muralidharan, Nath, Digbijoy N

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Realizing avalanche criticality in neuromorphic networks on a 2D hBN platform von Rao, Ankit, Sanjay, Sooraj, Dey, Vivek, Ahmadi, Majid, Yadav, Pramod, Venugopalrao, Anirudh, Bhat, Navakanta, Kooi, Bart, Raghavan, Srinivasan, Nukala, Pavan

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Self-assembled neuromorphic networks at self-organized criticality in Ag-hBN platform von Rao, Ankit, Sanjay, Sooraj, Ahmadi, Majid, Venugopalrao, Anirudh, Bhat, Navakanta, Kooi, Bart, Raghavan, Srinivasan, Nukala, Pavan

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Self-assembled neuromorphic networks at self-organized criticality in Ag-hBN platform von Rao, Ankit, Sooraj Sanjay, Ahmadi, Majid, Venugopalrao, Anirudh, Bhat, Navakanta, Kooi, Bart, Raghavan, Srinivasan, Nukala, Pavan

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