Low-Temperature Epitaxial Si, SiGe, and SiC in a 300mm UHV/CVD Reactor von Adam, Thomas N., Bedell, Stephen, Reznicek, Alexander, Sadana, Devendra K., Murphy, Richard J., Venkateshan, Aarthi, Tsunoda, Takaaki, Seino, Takuya, Nakatsuru, Junko, Shinde, Sanjay

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300mm Cold-Wall UHV/CVD Reactor for Low-Temperature Epitaxial (100) Silicon von Adam, Thomas N., Bedell, Stephen, Reznicek, Alexander, Sadana, Devendra K., Venkateshan, Aarthi, Tsunoda, Takaaki, Seino, Takuya, Nakatsuru, Junko, Shinde, Sanjay

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Electrical and Materials Characterization of Reactive and Co-Sputtered Tantalum Carbide Metal Electrodes for High-K Gate Applications von Edge, Lisa F., Vo, Tuan, Kellock, Andrew J., Linder, Barry P., Bruley, John, Zhu, Yu, DeHaven, Patrick, Paruchuri, Vamsi K., Tsunoda, Takaaki, Venkateshan, Aarthi, Shinde, Sanjay R.

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Low-Temperature Epitaxial Si, SiGe, and SiC in a 300mm UHV/CVD Reactor von Adam, Thomas N., Bedell, Stephen, Reznicek, Alexander, Sadana, Devendra K., Venkateshan, Aarthi, Tsunoda, Takaaki, Seino, Takuya, Nakatsuru, Junko, Shinde, Sanjay

Volltext

300mm Cold-Wall UHV/CVD Reactor for Low-Temperature Epitaxial (100) Silicon von Adam, Thomas N., Bedell, Stephen, Reznicek, Alexander, Sadana, Devendra K., Venkateshan, Aarthi, Tsunoda, Takaaki, Seino, Takuya, Nakatsuru, Junko, Shinde, Sanjay

Volltext

Electrical and Materials Characterization of Reactive and Co-Sputtered Tantalum Carbide Metal Electrodes for High-K Gate Applications von Edge, Lisa F., Vo, Tuan, Kellock, Andrew J., Linder, Barry P., Bruley, John, Zhu, Yu, Paruchuri, Vamsi K., Tsunoda, Takaaki, Venkateshan, Aarthi, Shinde, Sanjay R.

Volltext