Low-frequency noise in UHV/CVD epitaxial Si and SiGe bipolar transistors von Vempati, L.S., Cressler, J.D., Babcock, J.A., Jaeger, R.C., Harame, D.L.

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Ionizing radiation tolerance of high-performance SiGe HBT's grown by UHV/CVD von Babcock, J.A., Cressler, J.D., Vempati, L.S., Clark, S.D., Jaeger, R.C., Harame, D.L.

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Ionizing radiation tolerance and low-frequency noise degradation in UHV/CVD SiGe HBT's von Babcock, J.A., Cressler, J.D., Vempati, L.S., Clark, S.D., Jaeger, R.C., Harame, D.L.

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Low-frequency noise in UHV/CVD Si- and SiGe-base bipolar transistors von Vempati, L.S., Cressler, J.D., Babcock, J.A., Jaeger, R.C., Harame, D.L.

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The effects of reverse-bias emitter-base stress on the cryogenic operation of advanced UHV/CVD Si- and SiGe-base bipolar transistors von Babcock, J.A., Joseph, A.J., Cressler, J.D., Vempati, L.S.

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Correlation of low-frequency noise and emitter-base reverse-bias stress in epitaxial Si- and SiGe-base bipolar transistors von Babcock, J.A., Cressler, J.D., Vempati, L.S., Joseph, A.J., Harame, D.L.

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