Power improvement of AlGaAs/InGaAs PHEMTs by using low gamma radiation dose von Guhel, Y., Boudart, B., Vellas, N., Gaquiere, C.

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High linearity performances of GaN HEMT devices on silicon substrate at 4 GHz von Vellas, N., Gaquiere, C., Guhel, Y., Werquin, M., Bue, F., Aubry, R., Delage, S., Semond, F., De Jaeger, J.C.

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First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology von Werquin, M., Vellas, N., Guhel, Y., Ducatteau, D., Boudart, B., Pesant, J. C., Bougrioua, Z., Germain, M., De Jaeger, J. C., Gaquiere, C.

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Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps von GUHEL, Y, BOUDART, B, VELLAS, N, GAQUIERE, C, DELOS, E, DUCATTEAU, D, BOUGRIOUA, Z, GERMAIN, M

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MBE growth of ALGaN/GaN HEMTS on resistive Si(1 1 1) substrate with RF small signal and power performances von Cordier, Y., Semond, F., Lorenzini, P., Grandjean, N., Natali, F., Damilano, B., Massies, J., Hoël, V., Minko, A., Vellas, N., Gaquière, C., DeJaeger, J.C., Dessertene, B., Cassette, S., Surrugue, M., Adam, D., Grattepain, J-C., Aubry, R., Delage, S.L.

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Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon [111] substrate von Vellas, N., Gaquiere, C., Minko, A., Hoel, V., De Jaeger, J.C., Cordier, Y., Semond, F.

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Load impedance influence on the ID(YDS) characteristics of AlGaN/GaN HEMTs in large signal regime at 4 GHz von Vellas, N, Gaquiere, C, Bue, F, Guhel, Y, Boudart, B, de Jaeger, J.C, Poisson, M.A

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Load impedance influence on the I/sub D/(Y/sub DS/) characteristics of AlGaN/GaN HEMTs in large signal regime at 4 GHz von Vellas, N., Gaquiere, C., Bue, F., Guhel, Y., Boudart, B., de Jaeger, J.C., Poisson, M.A.

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Power improvement of AlGaAs/InGaAs PHEMTs by using low gamma radiation dose von Guhel, Y., Boudart, B., Vellas, N., Gaquière, Christophe

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A case-control study of Parkinson's disease and tobacco use: Gene-tobacco interactions von De Palma, Giuseppe, Dick, Finlay D., Calzetti, Stefano, Scott, Neil W., Prescott, Gordon J., Osborne, Aileen, Haites, Neva, Mozzoni, Paola, Negrotti, Anna, Scaglioni, Augusto, Mutti, Antonio

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High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate von Werquin, M., Ducatteau, D., Vellas, N., Delos, E., Cordier, Y., Aubry, R., Gaquière, C.

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Impact of a plasma pre-treatment before SiNx passivation on AlGaN-GaN HFET electrical behaviours von Guhel, Y., Boudart, B., Vellas, N., Gaquière, Christophe, Delos, E., Ducatteau, D., Bougrioua, Z., Germain, M.

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Impact of plasma pre-treatment before SiN x passivation on AlGaN/GaN HFETs electrical traps von Guhel, Y., Boudart, B., Vellas, N., Gaquière, C., Delos, E., Ducatteau, D., Bougrioua, Z., Germain, M.

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First results of AlGaN/GaN HEMTs on sapphire substrate using an argon ion implant isolation technology von Werquin, M., Vellas, N., Guhel, Y., Ducatteau, D., Boudart, B., Pesant, J. C., Bougrioua, Z., Germain, M., de Jaeger, Jean-Claude, Gaquière, Christophe

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Load impedance influence on the I(D) (V(DS)) characteristics of AlGaN/GaN HEMTs in large signal regime at 4 GHz von Vellas, N, Gaquiere, C, Bue, F, Guhel, Y, Boudart, B, de Jaeger, J C, Poisson, M A

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Load impedance influence on the I sub(D)(V sub(DS)) characteristics of AlGaN/GaN HEMTs in large signal regime at 4 GHz von Vellas, N, Gaquiere, C, Bue, F, Guhel, Y, Boudart, B, De Jaeger, J C, Poisson, M A

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AlGaN/GaN HEMTs on Resistive Si(111) Substrate: From Material Assessment to RF Power Performances von Cordier, Y., Semond, F., Lorenzini, P., Grandjean, N., Natali, F., Damilano, B., Massies, J., Hoël, V., Minko, A., Vellas, N., Gaquière, C., DeJaeger, J.C., Dessertene, B., Cassette, S., Surrugue, M., Adam, D., Grattepain, J.-C., Delage, S.L.

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GaN-on-Si HEMTs above 10 W/mm at 2 GHz together with high thermal stability at 325°C von Medjdoub, F, Marcon, D, Das, J, Derluyn, J, Cheng, K, Degroote, S, Vellas, N, Gaquière, C, Germain, M, Decoutere, S

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Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon 111 substrate von Vellas, N, Gaquiere, C, Minko, A, Hoel, V, De Jaeger, J C, Cordier, Y, Semond, F

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Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon (111) substrate von Vellas, N., Gaquière, Christophe, Minko, A., Hoel, Virginie, de Jaeger, Jean-Claude, Cordier, Y., Semond, F.

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