High-power V-band pseudomorphic InGaAs HEMT von Tan, K.L., Streit, D.C., Dia, R.M., Wang, S.K., Han, A.C., Chow, P.-M.D., Trinh, T.Q., Liu, P.H., Velebir, J.R., Yeii, H.C.

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Integrated complementary HBT microwave push-pull and Darlington amplifiers with p-n-p active loads von Kobayashi, K.W., Umemoto, D.K., Velebir, J.R., Oki, A.K., Streit, D.C.

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High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping and InGaAs emitter contacts von Streit, D.C., Oki, A.K., Umemoto, D.K., Velebir, J.R., Stolt, K.S., Yamada, F.M., Saito, Y., Hafizi, M.E., Bui, S., Tran, L.T.

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High-gain W band pseudomorphic InGaAs power HEMTs von Streit, D.C., Tan, K.L., Dia, R.M., Liu, J.K., Han, A.C., Velebir, J.R., Wang, S.K., Trinh, T.Q., Chow, P.-M.D., Lui, P.H., Yen, H.C.

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Ultralow-noise W-band pseudomorphic InGaAs HEMT's von Tan, K.L., Dia, R.M., Streit, D.C., Han, A.C., Trinh, T.Q., Velebir, J.R., Liu, P.H., Lin, T., Yen, H.C., Sholley, M., Shaw, L.

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Effect of exponentially graded base doping on the performance of GaAs/AlGaAs heterojunction bipolar transistors von Streit, D.C., Hafizi, M.E., Umemoto, D.K., Velebir, J.R., Tran, L.T., Oki, A.K., Kim, M.E., Wang, S.K., Kim, C.W., Sadwick, L.P., Hwu, R.J.

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InGaAs/InP photodiodes grown by metalorganic chemical vapor deposition von Dupuis, R.D., Campbell, J.C., Velebir, J.R.

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Avalanche photodiodes with separate absorption and multiplication regions grown by metalorganic vapor deposition von Dupuis, R.D., Velebir, J.R., Campbell, J.C., Qua, G.J.

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Reliability analysis of microwave GaAs/AlGaAs HBTs with beryllium and carbon doped base von Yamada, F.M., Oki, A.K., Streit, D.C., Saito, Y., Umemoto, D.K., Tran, L.T., Bui, S., Velebir, J.R., McIver, G.W.

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Optimization of low-noise GaAs MESFET's von Fukui, H., DiLorenzo, J.V., Hewitt, B.S., Velebir, J.R., Cox, H.M., Luther, L.C., Seman, J.A.

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A novel heterojunction bipolar transistor active feedback design von Kobayashi, K.W., Oki, A.K., Tran, L.T., Velebir, J.R., Streit, D.C.

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Beam-Lead plated heat sink GaAs IMPATT: Part I-Performance von DiLorenzo, J.V., Niehaus, W.C., Velebir, J.R., Iglesias, D.E.

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Complementary HBT push-pull amplifier by selective MBE von Kobayashi, K.W., Umemoto, D.K., Velebir, J.R., Oki, A.K., Streit, D.C.

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Submicron pseudomorphic double heterojunction InAlAs/In/sub 0.7/Ga/sub 0.3/As HEMTs with high cut-off and current-drive capability von Kwon, Y., Pavlidis, D., Brock, T., Ng, G.I., Tan, K.L., Velebir, J.R., Streit, D.C.

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Integrated complementary HBT microwave push-pull and Darlington amplifiers with PNP active loads von Kobayashi, K.W., Umemoto, D.K., Velebir, J.R., Streit, D.C., Oki, A.K.

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Low power consumption InAlAs-InGaAs-InP HBT SPDT PIN diode X-band switch von Kobayashi, K.W., Tran, L.T., Bui, S., Velebir, J.R., Oki, A.K., Streit, D.C.

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InAlAs/InGaAs HBT X-band double-balanced upconverter von Kobayashi, K.W., Tran, L.T., Bui, S., Oki, A.K., Velebir, J.R., Streit, D.C., Rosen, M.

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MBE growth and characterization of lattice-matched and pseudomorphic InGaAs/InAlAs/InP HEMTs von Streit, D.C., Tan, K.L., Liu, P.H., Chow, P.D., Velebir, J.R., Lai, R., Block, T.R., Stolt, K.S., Wojtowicz, M.

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