Anisotropic constitutive equations and experimental tensile behavior of brain tissue von Velardi, F, Fraternali, F, Angelillo, M

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Identification and compensation of Preisach hysteresis models for magnetostrictive actuators von Natale, C., Velardi, F., Visone, C.

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Thermal damage in SiC Schottky diodes induced by SE heavy ions von Abbate, C., Busatto, G., Cova, P., Delmonte, N., Giuliani, F., Iannuzzo, F., Sanseverino, A., Velardi, F.

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Turn-off instabilities in large area IGBTs von Abbate, C., Iannuzzo, F., Busatto, G., Sanseverino, A., Velardi, F., Ronsisvalle, C., Victory, J.

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Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit von Abbate, C., Busatto, G., Iannuzzo, F., Ronsisvalle, C., Sanseverino, A., Velardi, F.

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Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs von Busatto, G., Curro, G., Iannuzzo, F., Porzio, A., Sanseverino, A., Velardi, F.

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Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET von Busatto, G., Currò, G., Iannuzzo, F., Porzio, A., Sanseverino, A., Velardi, F.

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Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure von Busatto, G., De Luca, V., Iannuzzo, F., Sanseverino, A., Velardi, F.

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Developments on DC/DC converters for the LHC experiment upgrades von Abbate, C, Alderighi, M, Baccaro, S, Busatto, G, Citterio, M, Cova, P, Delmonte, N, Luca, V De, Fiore, S, Gerardin, S, Ghisolfi, E, Giuliani, F, Iannuzzo, F, Lanza, A, Latorre, S, Lazzaroni, M, Meneghesso, G, Paccagnella, A, Rampazzo, F, Riva, M, Sanseverino, A, Silvestri, R, Spiazzi, G, Velardi, F, Zanoni, E

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Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit von Abbate, C., Busatto, G., Sanseverino, A., Tedesco, D., Velardi, F.

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Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests von Abbate, C., Busatto, G., Sanseverino, A., Tedesco, D., Velardi, F.

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Visual function in infants with non‐syndromic craniosynostosis von Ricci, D, Vasco, G, Baranello, G, Salerni, A, Amante, R, Tamburrini, G, Dickmann, A, Di Rocco, C, Velardi, F, Mercuri, E

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Longitudinal assessment of visual development in non-syndromic craniosynostosis: a 1-year pre- and post-surgical study von Vasco, G, Baranello, G, Ricci, D, Salerni, A, Tamburrini, G, Amante, R, Dickmann, A, Di Rocco, C, Velardi, F, Mercuri, E

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Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes von Abbate, C., Busatto, G., Cova, P., Delmonte, N., Giuliani, F., Iannuzzo, F., Sanseverino, A., Velardi, F.

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Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit von Abbate, C., Busatto, G., Sanseverino, A., Tedesco, D., Velardi, F.

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Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET von Busatto, G., Di Pasquale, A., Marciano, D., Palazzo, S., Sanseverino, A., Velardi, F.

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Power converters for future LHC experiments von Alderighi, M, Citterio, M, Riva, M, Latorre, S, Costabeber, A, Paccagnella, A, Sichirollo, F, Spiazzi, G, Stellini, M, Tenti, P, Cova, P, Delmonte, N, Lanza, A, Bernardoni, M

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A new test methodology for an exhaustive study of single-event-effects on power MOSFETs von Busatto, G., Bisello, D., Currò, G., Giubilato, P., Iannuzzo, F., Mattiazzo, S., Pantano, D., Sanseverino, A., Silvestrin, L., Tessaro, M., Velardi, F., Wyss, J.

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Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity von Tenti, P, Spiazzi, G, Buso, S, Riva, M, Maranesi, P, Belloni, F, Cova, P, Menozzi, R, Delmonte, N, Bernardoni, M, Iannuzzo, F, Busatto, G, Porzio, A, Velardi, F, Lanza, A, Citterio, M, Meroni, C

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Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions von Busatto, G., Currò, G., Iannuzzo, F., Porzio, A., Sanseverino, A., Velardi, F.

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