Metal oxide resistive memory switching mechanism based on conductive filament properties von Bersuker, G., Gilmer, D. C., Veksler, D., Kirsch, P., Vandelli, L., Padovani, A., Larcher, L., McKenna, K., Shluger, A., Iglesias, V., Porti, M., Nafría, M.

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Simulations in Cyber-Security: A Review of Cognitive Modeling of Network Attackers, Defenders, and Users von Veksler, Vladislav D, Buchler, Norbou, Hoffman, Blaine E, Cassenti, Daniel N, Sample, Char, Sugrim, Shridat

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Cognitive Models in Cybersecurity: Learning From Expert Analysts and Predicting Attacker Behavior von Veksler, Vladislav D., Buchler, Norbou, LaFleur, Claire G., Yu, Michael S., Lebiere, Christian, Gonzalez, Cleotilde

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Leakage Current-Forming Voltage Relation and Oxygen Gettering in HfOx RRAM Devices von Young-Fisher, Kristina G., Bersuker, Gennadi, Butcher, Brian, Padovani, Andrea, Larcher, Luca, Veksler, D., Gilmer, David C.

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Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor von Teppe, F., Knap, W., Veksler, D., Shur, M. S., Dmitriev, A. P., Kachorovskii, V. Yu, Rumyantsev, S.

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Terahertz detection by GaN/AlGaN transistors von EL FATIMY, A, BOUBANGA TOMBET, S, HU, X, SELIUTA, D, VALUSIS, G, GAQUIERE, C, THERON, D, CAPPY, A, TEPPE, F, KNAP, W, VEKSLER, D. B, RUMYANTSEV, S, SHUR, M. S, PALA, N, GASKA, R, FAREED, Q

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Total Ionizing Dose Effects on TiN/Ti/HfO2/TiN Resistive Random Access Memory Studied via Electrically Detected Magnetic Resonance von Mccrory, Duane Jay, Lenahan, P. M., Nminibapiel, D. M., Veksler, D., Ryan, J. T., Campbell, J. P.

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InGaAs Inversion Layer Mobility and Interface Trap Density From Gated Hall Measurements von Chidambaram, T., Veksler, D., Madisetti, S., Yakimov, M., Tokranov, V., Oktyabrsky, S.

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TreePlus: Interactive Exploration of Networks with Enhanced Tree Layouts von Lee, B., Parr, C.S., Plaisant, C., Bederson, B.B., Veksler, V.D., Gray, W.D., Kotfila, C.

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Extraction of interface state density in oxide III-V gate stacks von Veksler, D, Bersuker, G, Madan, H, Morassi, L, Verzellesi, G

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Total Ionizing Dose Effects on TiN/Ti/HfO 2 /TiN Resistive Random-Access Memory Studied via Electrically Detected Magnetic Resonance von McCrory, D J, Lenahan, P M, Nminibapiel, D M, Veksler, D, Ryan, J T, Campbell, J P

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Device loading effects on nonresonant detection of terahertz radiation by silicon MOSFETs von Stillman, W., Shur, M.S., Veksler, D., Rumyantsev, S., Guarin, F.

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Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures von Muravjov, A. V., Veksler, D. B., Popov, V. V., Polischuk, O. V., Pala, N., Hu, X., Gaska, R., Saxena, H., Peale, R. E., Shur, M. S.

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Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor von Teppe, F., Veksler, D., Kachorovski, V. Yu, Dmitriev, A. P., Xie, X., Zhang, X.-C., Rumyantsev, S., Knap, W., Shur, M. S.

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Parasitic engineering for RRAM control von Shrestha, P.R., Nminibapiel, D.M., Veksler, D., Campbell, J.P., Ryan, J.T., Baumgart, H., Cheung, K.P.

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The Use of the Technique of «Theme Photobooks» in the Work with Children with Autism Spectrum Disorders or Intellectual Disorders von Veksler, D., Moskalenko, S.A.

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Symbolic Deep Networks: A Psychologically Inspired Lightweight and Efficient Approach to Deep Learning von Veksler, Vladislav D., Hoffman, Blaine E., Buchler, Norbou

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Editor's Review and Introduction: Cognition‐Inspired Artificial Intelligence von Cassenti, Daniel N., Veksler, Vladislav D., Ritter, Frank E.

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Underwater electrical wire explosion von Krasik, Ya E, Fedotov, A, Sheftman, D, Efimov, S, Sayapin, A, Gurovich, V Tz, Veksler, D, Bazalitski, G, Gleizer, S, Grinenko, A, Oreshkin, V I

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Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer von Kwon, H M, T-W, Kim, Hudnall, Todd W, Bielawski, Christopher W, Maszara, W, Veksler, D, Gilmer, D, Kirsch, P D, Banerjee, S K

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