Three-dimensional control of light in a two-dimensional photonic crystal slab von Lin, S.Y, Chow, Edmond, Johnson, S.G, Villeneuve, P.R, Joannopoulos, J.D, Wendt, J.R, Vawter, G.A, Zubrzycki, W, Hou, H, Alleman, A

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Layer disordering and doping compensation of an intersubband AlGaN/AlN superlattice by silicon implantation von Wierer, J. J., Allerman, A. A., Skogen, E. J., Tauke-Pedretti, A., Alford, C., Vawter, G. A., Montaño, I.

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Giant microwave photoresistance of two-dimensional electron gas von Ye, P. D., Engel, L. W., Tsui, D. C., Simmons, J. A., Wendt, J. R., Vawter, G. A., Reno, J. L.

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Modulation Response Improvement With Isolator-Free Injection-Locking von Chow, W.W., Yang, Z.S., Vawter, G.A., Skogen, E.J.

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Unidirectional operation in a semiconductor ring diode laser von HOHIMER, J. P, VAWTER, G. A, CRAFT, D. C

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High-efficiency subwavelength diffractive optical element in GaAs for 975 nm von Warren, M E, Smith, R E, Vawter, G A, Wendt, J R

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Coherent beams from high efficiency two-dimensional surface-emitting semiconductor laser arrays von GOURLEY, P. L, WARREN, M. E, HADLEY, G. R, VAWTER, G. A, BRENNAN, T. M, HAMMONS, B. E

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Polarization-sensitive subwavelength antireflection surfaces on a semiconductor for 975 nm von Smith, R E, Warren, M E, Wendt, J R, Vawter, G A

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Single-frequency continuous-wave operation of ring resonator diode lasers von HOHIMER, J. P, CRAFT, D. C, HADLEY, G. R, VAWTER, G. A, WARREN, M. E

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On-axis far-field emission from two-dimensional phase-locked vertical cavity surface-emitting laser arrays with an integrated phase-corrector von WARREN, M. E, GOURLEY, P. L, HADLEY, G. R, VAWTER, G. A, BRENNAN, T. M, HAMMONS, B. E, LEAR, K. L

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High magnetic-field microwave conductivity of two-dimensional electrons in an array of antidots von Ye, P. D., Engel, L. W., Tsui, D. C., Simmons, J. A., Wendt, J. R., Vawter, G. A., Reno, J. L.

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REACTIVE ION BEAM ETCHING OF IN-CONTAINING COMPOUND SEMICONDUCTORS IN AN INDUCTIVELY COUPLED Cl2/Ar PLASMA von Lee, J W, Shul, R J, Vawter, G A, Abernathy, C R, Pearton, S J, Hahn, Y B

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Comparison of plasma etch techniques for III–V nitrides von Shul, R.J, Vawter, G.A, Willison, C.G, Bridges, M.M, Lee, J.W, Pearton, S.J, Abernathy, C.R

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Semiconductor laser with tapered-rib adiabatic-following fiber coupler for expanded output-mode diameter von Vawter, G.A., Smith, R.E., Hou, H., Wendt, J.R.

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Unidirectional semiconductor ring lasers with racetrack cavities von HOHIMER, J. P, VAWTER, G. A

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Monolithic, multiple-wavelength vertical-cavity surface-emitting laser arrays by surface-controlled MOCVD growth rate enhancement and reduction von Ortiz, G.G., Luong, S.Q., Sun, S.Z., Cheng, J., Hou, H.Q., Vawter, G.A., Hammons, B.E.

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Passive mode locking of monolithic semiconductor ring lasers at 86 GHz von HOHIMER, J. P, VAWTER, G. A

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Monolithic wavelength-graded VCSEL and resonance-enhanced photodetector arrays for parallel optical interconnects von Luong, S.Q., Ortiz, G.G., Zhou, Y., Jun Lu, Hains, C.P., Cheng, J., Hou, H.Q., Vawter, G.A.

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New photoluminescence effects of carrier confinement at an AlGaAs/GaAs heterojunction interface von YUAN, Y. R, PUDENSI, M. A. A, VAWTER, G. A, MERZ, J. L

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novel reflectance modulator employing an InGaAs/AlGaAs strained-layer superlattice Fabry-Perot cavity with unstrained InGaAs/InAlAs mirrors von FRITZ, I. J, MYERS, D. R, VAWTER, G. A, BRENNAN, T. M, HAMMONS, B. E

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