Effect of HCl cleaning on InSb–Al 2 O 3 MOS capacitors von Vavasour, Oliver J, Jefferies, Richard, Walker, Marc, Roberts, Joseph W, Meakin, Naomi R, Gammon, Peter M, Chalker, Paul R, Ashley, Tim

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Effect of HCl cleaning on InSb-Al2O3 MOS capacitors von Vavasour, Oliver J, Jefferies, Richard, Walker, Marc, Roberts, Joseph W, Meakin, Naomi R, Gammon, Peter M, Chalker, Paul R, Ashley, Tim

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Design and Optimisation of Schottky Contact Integration in a 4H-SiC Trench MOSFET von Dai, Tian Xiang, Shah, Vishal A., Gammon, Peter Michael, Baker, G.W.C., Zhang, Lu Yang, Vavasour, Oliver James, Renz, A. Benjamin, Mawby, Philip Andrew

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Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition von Murphy, J.D., Li, Fan, Shah, Vishal A., Grant, Nicholas E., Esfahani, Siavash, Baker, G.W.C., Vavasour, Oliver James, Renz, A. Benjamin, Dai, Tian Xiang, Gammon, Peter Michael, Mawby, Philip Andrew

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(Invited, Digital Presentation) Improved Reliability of 4H-SiC Metal-Oxide-Semiconductor Devices Utilising Atomic Layer Deposited Layers with Enhanced Interface Quality von Renz, Arne Benjamin Benjamin, Vavasour, Oliver J, Gammon, Peter Michael, Li, Fan, Dai, Tianxiang, Baker, Guy W C, Grant, Nicholas E, Murphy, John D, Mawby, P. A., Shah, Vishal Ajit, Gott, James

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(Invited, Digital Presentation) Improved Reliability of 4H-SiC Metal-Oxide-Semiconductor Devices Utilising Atomic Layer Deposited Layers with Enhanced Interface Quality von Renz, Arne Benjamin Benjamin, Vavasour, Oliver J, Gammon, Peter Michael, Li, Fan, Dai, Tianxiang, Baker, Guy W C, Grant, Nicholas E, Murphy, John D, Mawby, P. A., Shah, Vishal Ajit, Gott, James

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High Mobility Silicon Dioxide Layers on 4H-SiC Deposited by Means of Atomic Layer Deposition von Cao, Qinze, Vavasour, Oliver James, Renz, Arne Benjamin, Baker, G.W.C., Shah, Vishal Ajit, Mawby, Philip Andrew, Gammon, Peter Michael, Gott, James A., Dai, Tian Xiang

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The Improved Reliability Performance of Post-Deposition Annealed ALD-SiO2 von Gammon, Peter Michael, Baker, G.W.C., Murphy, John D., Shah, Vishal Ajit, Li, Fan, Mawby, Philip Andrew, Grant, Nicholas, Vavasour, Oliver James, Dai, Tian Xiang, Renz, A. Benjamin

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Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes Using a P2O5 Surface Passivation Treatment von Cao, Qinze, Pathirana, Vasantha, Gammon, Peter Michael, Baker, G.W.C., Trajkovic, Tanya, Pérez-Tomás, Amador, Shah, Vishal Ajit, Bonyadi, Yeganeh, Mawby, Philip Andrew, Vavasour, Oliver James, Renz, A. Benjamin

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A Study of High Resistivity Semi-Insulating 4H-SiC Epilayers Formed via the Implantation of Germanium and Vanadium von Rommel, Mathias, Gammon, Peter Michael, Baker, G.W.C., Antoniou, Marina, Shah, Vishal Ajit, Li, Fan, Mawby, Philip Andrew, Vavasour, Oliver James, Dai, Tian Xiang, Renz, A. Benjamin

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