Selective and blanket electroless copper deposition for ultralarge scale integration von DUBIN, V. M, SHACHAM-DIAMAND, Y, ZHAO, B, VASUDEV, P. K, TING, C. H

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Compression of Hydrogen Gas for Energy Storage: A Review von Orlova, S., Mezeckis, N., Vasudev, V. P. K.

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Numerical Modelling of a Turbine Flow Meter Used as Part of the Hydrogen Compressor System von Orlova, S., Devdas, T. N., Vasudev, V. P. K., Upnere, S.

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Compatibility of the Low‐Dielectric‐Constant Poly(arylether) with the Electroless Copper Deposition Solution von HSU, D. T, ISKANDAR, M, SHI, F. G, LOPATIN, S, SHACHAM-DIAMAND, Y, TONG, H. Y, ZHAO, B, BRONGO, M, VASUDEV, P. K

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Interfacial microstructure and reaction at the spin-coated fluorinated polyimide/Al interface : surface-enhanced X-ray diffraction and TEM studies von TONG, H. Y, SHI, F. G, ZHAO, B, WANG, S.-Q, BRONGO, M, VASUDEV, P. K

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Charge-to-breakdown characteristics of thin gate oxide and buried oxide on SIMOX SOI wafers von SEO, J.-H, WOO, J. C, MENDICINO, M, VASUDEV, P. K

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A novel sub-half micron Al-Cu via plug interconnect using low dielectric constant material as inter-level dielectric von Zhao, B., Biberger, M.A., Hoffman, V., Wang, S.-Q., Vasudev, P.K., Seidel, T.E.

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Silicon-on-insulator material qualification for low-power complementary metal-oxide semiconductor application von Mendicino, M.A., Vasudev, P.K., Maillot, P., Hoener, C., Baylis, J., Bennett, J., Boden, T., Jackett, S., Huffman, K., Godwin, M.

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Change in chemical state of fluorinated polyimides after the electroless Cu deposition solution treatment von HSU, D. T, SHI, F. G, LOPATIN, S, SHACHAM-DIAMAND, Y, ZHAO, B, BRONGO, M, VASUDEV, P. K

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Two-dimensional analytic modeling of very thin SOI MOSFETs von Woo, J.C.S., Terrill, K.W., Vasudev, P.K.

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CMOS device and interconnect technology enhancements for low power/low voltage applications von Vasudev, P.K.

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Chromium redistribution during thermal annealing of semi-insulating GaAs as a function of encapsulant and implant fluence von Vasudev, P. K., Wilson, R. G., Evans, C. A.

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Recent advances in solid-phase epitaxial recrystallization of SOS with applications to CMOS and bipolar devices von Vasudev, P. K.

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A short-channel CMOS/SOS technology in recrystallized 0.3-μm-thick silicon-on-sapphire films von MAYER, D. C, VASUDEV, P. K, LEE, J. Y, ALLEN, Y. K, HENDERSON, R. C

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Considerations for 0.25.MU.m optical lithography using phase shifting masks von Vasudev, P. K.

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Strip-plot design for two-step processes von Milliken, George A., Shi, Xiaoyu, Mendicino, Michael, Vasudev, P. K.

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Chromium concentrations, depth distributions, and diffusion coefficient in bulk and epitaxial GaAs and in Si von Wilson, R. G., Vasudev, P. K., Jamba, D. M., Evans, C. A., Deline, V. R.

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Specular reflectance and surface roughness of silicon on sapphire von Robertson, G.D., Baron, R., Vasudev, P.K., Marsh, O.J.

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Damage gettering of Cr during the annealing of Cr and S implants in semi-insulating GaAs von Vasudev, P. K., Wilson, R. G., Evans, C. A.

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Advanced materials for low power electronics von Vasudev, P.K., Mendicino, M., Seidel, T.E.

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