Electrophysical properties of PIN photodiodes of the 2.2-2.6 μm range based on InGa(Al)As/InP heterostructures with a metamorphic buffer layer von Vasilkova, Elena I., Pirogov, Evgeny V., Shubina, Kseniya Yu, Voropaev, Kirill O., Vasil’ev, Аndrey А., Karachinsky, Leonid Ya, Novikov, Innokenty I., Barantsev, Oleg V., Sobolev, Maxim S.

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