Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors von Paz-Martínez, G., Íñiguez-de-la-Torre, I., Sánchez-Martín, H., García-Vasallo, B., Wichmann, N., González, T., Mateos, J.

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Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band von Pena, R. A., Orfao, B., Iniguez-de-la-Torre, I., Paz, G., Daher, M. A., Roelens, Y., Zaknoune, M., Mateos, J., Gonzalez, T., Vasallo, B. G., Perez, S.

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Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples von Orfao, B., Di Gioia, G., Vasallo, B. G., Pérez, S., Mateos, J., Roelens, Y., Frayssinet, E., Cordier, Y., Zaknoune, M., González, T.

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Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes von Orfao, B., Vasallo, B. G., Perez, S., Mateos, J., Moro-Melgar, D., Zaknoune, M., Gonzalez, T.

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On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes von Garcia-Sanchez, S., Daher, M. Abou, Lesecq, M., Huo, L., Lingaparthi, R., Nethaji, D., Radhakrishnan, K., Iniguez-de-la-Torre, I., Vasallo, B. G., Perez, S., Gonzalez, T., Mateos, J.

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Analysis of Surface Charge Effects and Edge Fringing Capacitance in Planar GaAs and GaN Schottky Barrier Diodes von Orfao, B., Vasallo, B. G., Moro-Melgar, D., Perez, S., Mateos, J., Gonzalez, T.

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Avoiding avalanche breakdown in planar GaN Gunn diodes by means of a substrate contact von García-Sánchez, S, Pérez, S, Íñiguez-de-la-Torre, I, García-Vasallo, B, Huo, L, Lingaparthi, R, Nethaji, D, Radhakrishnan, K, Abou Daher, M, Lesecq, M, González, T, Mateos, J

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Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes von Orfao, B., Abou Daher, M., Peña, R. A., Vasallo, B. G., Pérez, S., Íñiguez-de-la-Torre, I., Paz-Martínez, G., Mateos, J., Roelens, Y., Zaknoune, M., González, T.

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Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis von Vasallo, B. G., González, T., Talbo, V., Lechaux, Y., Wichmann, N., Bollaert, S., Mateos, J.

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Ballistic nanodevices for terahertz data processing: Monte Carlo simulations von Mateos, J, Vasallo, B G, Pardo, D, González, T, Galloo, J S, Roelens, Y, Bollaert, S, Cappy, A

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Operation and high-frequency performance of nanoscale unipolar rectifying diodes von Mateos, J., Vasallo, B. G., Pardo, D., González, T.

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Microscopic modeling of nonlinear transport in ballistic nanodevices von Mateos, J., Vasallo, B.G., Pardo, D., Gonzalez, T., Galloo, J.S., Bollaert, S., Roelens, Y., Cappy, A.

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Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits von Vasallo, B G, Millithaler, J F, Íñiguez-de-la-Torre, I, González, T, Ducournau, G, Gaquière, C, Mateos, J

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Monte Carlo modelling of noise in advanced III–V HEMTs von Mateos, J., Rodilla, H., Vasallo, B. G., González, T.

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Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs von Talbo, V, Mateos, J, González, T, Lechaux, Y, Wichmann, N, Bollaert, S, Vasallo, B G

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Kink effect and noise performance in isolated-gate InAs AlSb high electron mobility transistors von Vasallo, B G, Rodilla, H, González, T, Moschetti, G, Grahn, J, Mateos, J

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Improvement of interfacial and electrical properties of Al2O3 n-Ga0.47In0.53As for III-V impact ionization MOSFETs von Lechaux, Y, Fadjie, A, Bollaert, S, Talbo, V, Mateos, J, González, T, Vasallo, B G, Wichmann, N

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Modeling of High-Frequency Noise in III-V Double-Gate HFETs von Vasallo, B G

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Room temperature nonlinear transport in ballistic nanodevices von González, T, Vasallo, B G, Pardo, D, Mateos, J

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Influence of the kink effect on the dynamic performance of short-channel InAlAs/InGaAs high electron mobility transistors von Vasallo, B G, Mateos, J, Pardo, D, González, T

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