Application of focused ion beam lift-out specimen preparation to TEM, SEM, STEM, AES and SIMS analysis von Stevie, F. A., Vartuli, C. B., Giannuzzi, L. A., Shofner, T. L., Brown, S. R., Rossie, B., Hillion, F., Mills, R. H., Antonell, M., Irwin, R. B., Purcell, B. M.

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Ion implantation doping and isolation of GaN von Pearton, S. J., Vartuli, C. B., Zolper, J. C., Yuan, C., Stall, R. A.

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The effect of Cr barrier on interfacial reaction of Au/Zn/Au/Cr/Au contacts to p-type InGaAs/InP von Huang, J.S., Vartuli, C.B.

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Wet chemical etching of AlN and InAlN in KOH solutions von VARTULI, C. B, PEARTON, S. J, LEE, J. W, ABERNATHY, C. R, MACKENZIE, J. D, ZOLPER, J. C, SHUL, R. J, REN, F

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High temperature electron cyclotron resonance etching of GaN, InN, and AlN von Shul, R. J., Kilcoyne, S. P., Hagerott Crawford, M., Parmeter, J. E., Vartuli, C. B., Abernathy, C. R., Pearton, S. J.

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ICl/Ar electron cyclotron resonance plasma etching of III–V nitrides von Vartuli, C. B., Pearton, S. J., Lee, J. W., Hong, J., MacKenzie, J. D., Abernathy, C. R., Shul, R. J.

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Effect of dry etching on surface properties of III-nitrides von Ren, F., Lothian, J. R., Pearton, S. J., Abernahty, C. R., Vartuli, C. B., Mackenzie, J. D., Wilson, R. G., Karlicek, R. F.

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Low bias dry etching of III-nitrides in Cl2-based inductively coupled plasmas von Cho, Hyun, Vartuli, C. B., Donovan, S. M., Mackenzie, J. D., Abernathy, C. R., Pearton, S. J., Shul, R. J., Constantine, C.

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Effect of BCl3 dry etching on InAlN surface properties von REN, F, LOTHIAN, J. R, CHEN, Y. K, MACKENZIE, J. D, DONOVAN, S. M, VARTULI, C. B, ABERNATHY, C. R, LEE, J. W, PEARTON, S. J

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Scanning transmission electron microscopy study of Au/Zn/Au/Cr/Au and Au/Ti/Pt/Au/Cr/Au contacts to p -type InGaAs/InP von Huang, J. S., Vartuli, C. B.

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Implantation and redistribution of dopants and isolation species in GaN and related compounds von Wilson, R.G., Vartuli, C.B., Abernathy, C.R., Pearton, S.J., Zavada, J.M.

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C implantation and surface degradation of InGaP von VARTULI, C. B, ABERNATHY, C. R, PEARTON, S. J, ZOLPER, J. C, HOWARD, A. J

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High-density etching of group III nitride ternary films von SHUL, R. J, HOWARD, A.J, PEARTON, S. J, ABERNATHY, C. R, VARTULI, C. B

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Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides von Vartuli, C. B., MacKenzie, J. D., Lee, J. W., Abernathy, C. R., Pearton, S. J., Shul, R. J.

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Dry etching and implantation characteristics of III-N alloys von Pearton, S.J., Vartuli, C.B., Shul, R.J., Zolper, J.C.

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Correlation of resistance and interfacial reaction of contacts to n-type InP von Huang, J. S., Vartuli, C. B., Nguyen, T., Bar-Chaim, N., Shearer, J., Fisher, C., Anderson, S.

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Inductively coupled plasma etching of III-V nitrides in CH4/H2/Ar and CH4/H2/N2 chemistries von VARTULI, C. B, PEARTON, S. J, LEE, J. W, MACKENZIE, J. D, ABERNATHY, C. R, SHUL, R. J, CONSTANTINE, C, BARRATT, C

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Effect of current crowding on contact failure in heavily doped n+- and p+-silicon-on-insulator von Huang, J. S., Chen, Chih, Yeh, C. C., Tu, K. N., Shofner, T. L., Drown, J. L., Irwin, R. B., Vartuli, C. B.

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Electron cyclotron resonance plasma etching of AlGaN in Cl2/Ar and BCl3/Ar plasmas von VARTULI, C. B, PEARTON, S. J, LEE, J. W, POLYAKOV, A. Y, SHIN, M, GREVE, D. W, SKRONOWSKI, M, SHUL, R. J

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Selective Dry Etching of III‐V Nitrides in Cl2 / Ar ,  CH 4 /  H 2 / Ar , ICl/Ar, and IBr/Ar von Vartuli, C. B., Pearton, S. J., MacKenzie, J. D., Abernathy, C. R., Shul, R. J.

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