Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3 insulator von Voitsekhovskii, Alexander V., Nesmelov, Sergey N., Dzyadukh, Stanislav M., Vasil`ev, Vladimir V., Varavin, Vasiliy S., Dvoretsky, Sergey A., Mikhailov, Nikolay N., Yakushev, Maxim V., Sidorov, Georgiy Y.

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Hydrogenation of Hg1-xCdxTe films at chemical treatments von Sidorov, Georgiy Yu, Sidorov, Yuriy G., Varavin, Vasiliy S.

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Admittance of MIS structures based on graded-gap MBE HgCdTe with Al sub(2)O sub(3) insulator von Voitsekhovskii, Alexander V, Nesmelov, Sergey N, Dzyadukh, Stanislav M, Vasil`ev, Vladimir V, Varavin, Vasiliy S, Dvoretsky, Sergey A, Mikhailov, Nikolay N, Yakushev, Maxim V, Sidorov, Georgiy Y

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Admittance of MIS structures based on graded‐gap MBE HgCdTe with Al 2 O 3 insulator von Voitsekhovskii, Alexander V., Nesmelov, Sergey N., Dzyadukh, Stanislav M., Vasil`ev, Vladimir V., Varavin, Vasiliy S., Dvoretsky, Sergey A., Mikhailov, Nikolay N., Yakushev, Maxim V., Sidorov, Georgiy Y.

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Hydrogenation of Hg 1‐x Cd x Te films at chemical treatments von Sidorov, Georgiy Yu, Sidorov, Yuriy G., Varavin, Vasiliy S.

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LWIR detectors for subthermonuclear plasma study von Vasiliev, V., Varavin, V., Dvoretsky, S., Marchishin, I., Mikhailov, N., Sidorov, Y., Ovsyuk, V.N., Suslyakov, A., Aseev, A., Burmasov, V., Gorbunov, O., Kruglyakov, E., Polosatkin, S.

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