Application of regenerative braking on electric rolling stock von Konstantinova, M V, Varavin, V I, Dagaev, R R

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Arsenic-doped HgCdTe: FTIR photoluminescence and photoreflectance spectroscopy study von Ruzhevich, M.S., Mynbaev, K.D., Firsov, D.D., Chumanov, I.V., Komkov, O.S., Marin, D.V., Varavin, V.S., Yakushev, M.V.

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Study for the microwave interferometer for high densities plasmas on COMPASS-U tokamak von Varavin, M., Varavin, A., Naydenkova, D., Zajac, J., Zacek, F., Nanobashvili, S., Panek, R., Weinzettl, V., Bilkova, P., Kovarik, K., Jaulmes, F., Farnik, M., Imrisek, M., Bogar, O.

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Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing von Korotaev, A.G., Izhnin, I.I., Mynbaev, K.D., Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.M., Fitsych, O.I., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Bonchyk, O.Yu, Savytskyy, H.V., Swiatek, Z., Morgiel, J.

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Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing von Korotaev, A.G., Voitsekhovskii, A.V., Izhnin, I.I., Mynbaev, K.D., Nesmelov, S.N., Dzyadukh, S.M., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Sidorov, G.Y.

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ESG Transformation Factors of Kazakhstan's Economy in the Context of Sustainable Development von Kuur, O. V., Varavin, Ye. V., Kozlova, M. V.

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Formation of Acceptor Centers in CdHgTe as a Result of Water and Heat Treatments von Sidorov, G. Yu, Sidorov, Yu. G., Shwets, V. A., Varavin, V. S.

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Reconversion of the CdHgTe conductivity type after plasma etching process at low temperature von Gorshkov, D. V., Sidorov, G. Yu, Varavin, V. S., Sabinina, I. V., Yakushev, M. V.

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Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te von Ruzhevich, M. S., Firsov, D. D., Komkov, O. S., Mynbaev, K. D., Varavin, V. S., Yakushev, M. V.

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Calorimetry probe for runaway electron heat load measurement at COMPASS von Caloud, J., Tomesova, E., Ficker, O., Cerovsky, J., Mlynar, J., Adamek, J., Barton, P., Bilkova, P., Bohm, P., Bousek, M., Brotankova, J., Duran, I., Entler, S., Havranek, A., Jerab, M., Kovarik, K., Krbec, J., Kulkov, S., Marcisovsky, M., Sos, M., Tadros, M., Tomes, M., Varavin, M., Vondracek, P., Weinzettl, V.

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Erratum to: Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te von Ruzhevich, M. S., Firsov, D. D., Komkov, O. S., Mynbaev, K. D., Varavin, V. S., Yakushev, M. V.

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Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates von Rumyantsev, V V, Kozlov, D V, Morozov, S V, Fadeev, M A, Kadykov, A M, Teppe, F, Varavin, V S, Yakushev, M V, Mikhailov, N N, Dvoretskii, S A, Gavrilenko, V I

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A Megapixel Matrix Photodetector of the Middle Infrared Range von Bazovkin, V. M., Varavin, V. S., Vasil’ev, V. V., Glukhov, A. V., Gorshkov, D. V., Dvoretsky, S. A., Kovchavtsev, A. P., Makarov, Yu. S., Marin, D. V., Mzhelsky, I. V., Polovinkin, V. G., Remesnik, V. G., Sabinina, I. V., Sidorov, Yu. G., Sidorov, G. Yu, Stroganov, A. S., Tsarenko, A. V., Yakushev, M. V., Latyshev, A. V.

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Photoluminescence of Hg0.3Cd0.7Te and Hg0.7Cd0.3Te Epitaxial Films von Ruzhevich, M. S., Mynbaev, K. D., Bazhenov, N. L., Varavin, V. S., Remesnik, V. G., Mikhailov, N. N., Yakushev, M. V.

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The relaxation of electrophysical properties HgCdTe epitaxial films affected by plasma of high frequency nanosecond volume discharge in atmospheric-pressure air von Korotaev, A.G., Grigoryev, D.V., Voitsekhovskii, A.V., Lozovoy, K.A., Tarasenko, V.F., Ripenko, V.S., Shulepov, M.A., Erofeev, M.V., Yakushev, M.V., Dvoretskii, S.A., Mikhailov, N.N., Varavin, V.S.

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Terahertz Photoluminescence of Double Acceptors in Bulky Epitaxial HgCdTe Layers and HgTe/CdHgTe Structures with Quantum Wells von Kozlov, D. V., Rumyantsev, V. V., Morozov, S. V., Kadykov, A. M., Fadeev, M. A., Zholudev, M. S., Varavin, V. S., Mikhailov, N. N., Dvoretskii, S. A., Gavrilenko, V. I., Teppe, F.

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Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation von Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.M., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Sidorov, G.Y.

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Investigation of the Effect of Thermal Annealing on the Electrical Properties of the Near-Surface Layer of MBE n-HgCdTe Using MIS Techniques von Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Varavin, V. S., Dvoretsky, S. A., Mikhailov, N. N., Sidorov, G. Y., Yakushev, M. V., Marin, D. V.

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Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques von Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Varavin, V. S., Dvoretsky, S. A., Mikhailov, N. N., Sidorov, G. Y., Yakushev, M. V., Marin, D. V.

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Electrical and microscopic characterization of p+-type layers formed in HgCdTe by arsenic implantation von Izhnin, I I, Mynbaev, K D, Voitsekhovskii, A V, Nesmelov, S N, Dzyadukh, S M, Korotaev, A G, Varavin, V S, Dvoretsky, S A, Marin, D V, Yakushev, M V, Swiatek, Z, Morgiel, J, Bonchyk, O Yu

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