Three-channel phase meters based on the AD8302 and field programmable gate arrays for heterodyne millimeter wave interferometer von Varavin, A., Ermak, G., Vasilev, A., Fateev, A., Varavin, N., Zacek, F., Zajac, J.

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Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing von Korotaev, A.G., Izhnin, I.I., Mynbaev, K.D., Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.M., Fitsych, O.I., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Bonchyk, O.Yu, Savytskyy, H.V., Swiatek, Z., Morgiel, J.

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Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing von Korotaev, A.G., Voitsekhovskii, A.V., Izhnin, I.I., Mynbaev, K.D., Nesmelov, S.N., Dzyadukh, S.M., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Sidorov, G.Y.

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Photoluminescence of Hg0.3Cd0.7Te and Hg0.7Cd0.3Te Epitaxial Films von Ruzhevich, M. S., Mynbaev, K. D., Bazhenov, N. L., Varavin, V. S., Remesnik, V. G., Mikhailov, N. N., Yakushev, M. V.

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Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation von Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.M., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Sidorov, G.Y.

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Investigation of the Effect of Thermal Annealing on the Electrical Properties of the Near-Surface Layer of MBE n-HgCdTe Using MIS Techniques von Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Varavin, V. S., Dvoretsky, S. A., Mikhailov, N. N., Sidorov, G. Y., Yakushev, M. V., Marin, D. V.

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Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques von Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Varavin, V. S., Dvoretsky, S. A., Mikhailov, N. N., Sidorov, G. Y., Yakushev, M. V., Marin, D. V.

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Accumulation of Arsenic Implantation-Induced Donor Defects in Hg0.7Cd0.3Te Heteroepitaxial Structures von Izhnin, I. I., Mynbaev, K. D., Voitsekhovskii, A. V., Korotaev, A. G., Varavin, V. S., Dvoretsky, S. A., Mikhailov, N. N., Yakushev, M. V., Fitsych, O. I., Swiatek, Z., Jakiela, R.

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Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates von Rumyantsev, V V, Kozlov, D V, Morozov, S V, Fadeev, M A, Kadykov, A M, Teppe, F, Varavin, V S, Yakushev, M V, Mikhailov, N N, Dvoretskii, S A, Gavrilenko, V I

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Electrical and microscopic characterization of p+-type layers formed in HgCdTe by arsenic implantation von Izhnin, I I, Mynbaev, K D, Voitsekhovskii, A V, Nesmelov, S N, Dzyadukh, S M, Korotaev, A G, Varavin, V S, Dvoretsky, S A, Marin, D V, Yakushev, M V, Swiatek, Z, Morgiel, J, Bonchyk, O Yu

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The relaxation of electrophysical properties HgCdTe epitaxial films affected by plasma of high frequency nanosecond volume discharge in atmospheric-pressure air von Korotaev, A.G., Grigoryev, D.V., Voitsekhovskii, A.V., Lozovoy, K.A., Tarasenko, V.F., Ripenko, V.S., Shulepov, M.A., Erofeev, M.V., Yakushev, M.V., Dvoretskii, S.A., Mikhailov, N.N., Varavin, V.S.

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Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis von Izhnin, I I, Syvorotka, I I, Fitsych, O I, Varavin, V S, Dvoretsky, S A, Marin, D V, Mikhailov, N N, Remesnik, V G, Yakushev, M V, Mynbaev, K D, Voitsekhovsky, A V, Korotaev, A G

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Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies von Mynbaev, K. D., Bazhenov, N. L., Dvoretsky, S. A., Mikhailov, N. N., Varavin, V. S., Marin, D. V., Yakushev, M. V.

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Terahertz Photoluminescence of Double Acceptors in Bulky Epitaxial HgCdTe Layers and HgTe/CdHgTe Structures with Quantum Wells von Kozlov, D. V., Rumyantsev, V. V., Morozov, S. V., Kadykov, A. M., Fadeev, M. A., Zholudev, M. S., Varavin, V. S., Mikhailov, N. N., Dvoretskii, S. A., Gavrilenko, V. I., Teppe, F.

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Analysis of carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te von Izhnin, I.I., Mynbaev, K.D., Voitsekhovskii, A.V., Korotaev, A.G., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Fitsych, O.I., Swiatek, Z., Jakiela, R.

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Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates von Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.M., Varavin, V.S., Dvoretskii, S.A., Mikhailov, N.N., Yakushev, M.V., Sidorov, G.Yu

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Strong Disorder in HgCdTe Studied with Optical Methods and X-Ray Diffraction von Andryushchenko, D A, Trapeznikova, I N, Bazhenov, N L, Yagovkina, M A, Mynbaev, K D, Remesnik, V G, Varavin, V S

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Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis von Izhnin, I.I., Mynbaev, K.D., Voitsekhovsky, A.V., Korotaev, A.G., Syvorotka, I.I., Fitsych, O.I., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Remesnik, V.G., Yakushev, M.V., Swiatek, Z., Morgiel, J., Bonchyk, O.Yu, Savytskyy, H.V.

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TEM studies of structural defects in HgTe/HgCdTe quantum wells von Bonchyk, O. Yu, Savytskyy, H. V., Swiatek, Z., Morgiel, Y., Izhnin, I. I., Voitsekhovskii, A. V., Korotaev, A. G., Mynbaev, K. D., Fitsych, O. I., Varavin, V. S., Dvoretsky, S. A., Mikhailov, N. N., Yakushev, M. V.

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SIGNAL FORMATION AND PROCESSING FEATURES FROM AUTODYNE RADAR WITH A WIDE FREQUENCY MODULATION BAND. (РART 1) von Ermak, G. P., Vasilev, A.S., Varavin, A.V., Balaban, M. V., Fateev, A. V., Zheltov, V. N.

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