Occlusion management in distributed multi-object tracking for visual-surveillance von Bousetouane, F., Vandewiele, F., Motamed, C.

Volltext

Modeling of ultrathin double-gate nMOS/SOI transistors von Francis, P., Terao, A., Flandre, D., Van de Wiele, F.

Volltext

Modified Boltzmann boundary conditions in junction theory von Van De Wiele, F.

Volltext

PhD forum: A data mining approach for human activity learning in a multi-modal sensor system von Vandewiele, F., Motamed, C.

Volltext bestellen

Visibility management for object tracking in the context of a fisheye camera network von Vandewiele, F., Motamed, C., Yahiaoui, T.

Volltext bestellen

Measurement of threshold voltages of thin-film accumulation-mode PMOS/SOI transistors von Terao, A., Flandre, D., Lora-Tamayo, E., Van de Wiele, F.

Volltext

Moderate inversion model of ultrathin double-gate nMOS/SOI transistors von Francis, P., Terao, A., Flandre, D., Van de Wiele, F.

Volltext

Subthreshold slope of long-channel, accumulation-mode p-channel SOI MOSFETs von Colinge, J.P., Flandre, D., Van de Wiele, F.

Volltext

A long-channel MOSFET model von Van de Wiele, F.

Volltext

An analytical model for GAA transistors von Terao, A., Van de Wiele, F.

Volltext

Measurement and two-dimensional simulation of thin-film SOI MOSFETs: Intrinsic gate capacitances at elevated temperatures von Gentinne, B., Flandre, D., Colinge, J.-P., Van De Wiele, F.

Volltext

Characteristics of nMOS/GAA (Gate-All-Around) transistors near threshold von Francis, P., Terao, A., Flandre, D., Van de Wiele, F.

Volltext

Low current 1-D model for SOI structures—Numerical analysis by a fixed function integration method (fixfun) von Van de Wiele, F., Paelinck, P.

Volltext

Measurement of diffusion length and surface recombination velocity in Interdigitated Back Contact (IBC) and Front Surface Field (FSF) solar cells von Verlinden, Pierre, Van de Wiele, Fernand

Volltext

Measurement of intrinsic gate capacitances of SOI MOSFET's von Flandre, D., Van De Wiele, F., Jespers, P.G.A., Haond, M.

Volltext

Weak inversion models for nMOS gate-all-around (GAA) devices von Francis, P., Terao, A., Flandre, D., Van de Wiele, F.

Volltext bestellen

Current lines and accurate contact current evaluation in 2-D numerical simulation of semiconductor devices von Palm, E., Van de Wiele, F.

Volltext

Laser light absorption in multilayers von Colinge, J. P., Van de Wiele, F.

Volltext

Space-charge recombination current in a diffused p-n junction von van de Wiele, F.

Volltext

RBS study of the effect of arsenic and phosphorus interfacial segregation upon the sintering of contacts between implanted polycrystalline silicon and aluminum: Silicon(1%) von Herbots, Nicole, Lobet, Maurice, Van de Wiele, Fernand

Volltext