Critical discussion on unified 1/f noise models for MOSFETs von Vandamme, E.P., Vandamme, L.K.J.

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Noise as a diagnostic tool for quality and reliability of electronic devices von Vandamme, L.K.J.

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General relation between refractive index and energy gap in semiconductors von Hervé, P., Vandamme, L.K.J.

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Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors von Nenadovic, N., Mijalkovic, S., Nanver, L.K., Vandamme, L.K.J., d'Alessandro, V., Schellevis, H., Slotboom, J.W.

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Modeling random telegraph noise under switched bias conditions using cyclostationary RTS noise von van der Wel, A.P., Klumperink, E.A.M., Vandamme, L.K.J., Nauta, B.

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On the additivity of generation-recombination spectra Part 3: The McWhorter model for 1/ f noise in MOSFETs von Vandamme, L.K.J., Hooge, F.N.

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Measurement of low-frequency base and collector current noise and coherence in SiGe heterojunction bipolar transistors using transimpedance amplifiers von Bruce, S.P.O., Vandamme, L.K.J., Rydberg, A.

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Suppression of contact noise in a study on 1/f noise as a function of film thickness in Al-doped ZnO von Achahour, A., Leroy, G., Vandamme, L.K.J., Ayachi, B., Duponchel, B., Waldhoff, N., Blary, K., Vilcot, J.-P.

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Improved correlation measurements using voltage and transimpedance amplifiers in low-frequency noise characterization of bipolar transistors von Bruce, S., Vandamme, L.K.J., Rydberg, A.

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What Do We Certainly Know Abouthbox{1}/f$ Noise in MOSTs? von Vandamme, L.K.J., Hooge, F N

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On the anomalous behavior of the relative amplitude of RTS noise von Vandamme, L.K.J., Sodini, D., Gingl, Z.

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Low frequency gate noise in a diode-connected MESFET: measurements and modeling von Lambert, B., Malbert, N., Verdier, F., Labat, N., Touboul, A., Vandamme, L.K.J.

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1/ f noise in polyaniline/polyurethane (PANI/PU) blends von Liang, C., Leroy, G., Gest, J., Vandamme, L.K.J., Wojkiewicz, J.-L.

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What Do We Certainly Know About [Formula Omitted] Noise in MOSTs? von Vandamme, L.K.J, Hooge, F.N

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Parameter extraction and 1/ f noise in a surface and a bulk-type, p-channel LDD MOSFET von Li, Xiaosong, Barros, C., Vandamme, E.P., Vandamme, L.K.J.

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Separation of random telegraph signals from 1/f noise in MOSFETs under constant and switched bias conditions von Kolhatkar, J.S., Vandamme, L.K.J., Salm, C., Wallinga, H.

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1/f noise in MOS devices, mobility or number fluctuations? von Vandamme, L.K.J., Xiaosong Li, Rigaud, D.

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What Do We Certainly Know About \hbox/f Noise in MOSTs? von Vandamme, L.K.J., Hooge, F.N.

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Coherence between gate- and drain-current fluctuations in MESFET's and MODFET's biased in the ohmic region von Vandamme, L.K.J., Rigaud, D., Peransin, J.-M.

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Thermal annealing of MgO substrate increases 1/ f noise in YBaCuO x at 300 K and reduces the sheet resistance in the superconducting thin film von Leroy, G., Gest, J., Vandamme, L.K.J., Carru, J.-C.

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