Monolayer to Bulk Properties of Hexagonal Boron Nitride von Wickramaratne, Darshana, Weston, Leigh, Van de Walle, Chris G

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Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices von Kioupakis, Emmanouil, Yan, Qimin, Steiauf, Daniel, Van de Walle, Chris G

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Minimizing hydrogen vacancies to enable highly efficient hybrid perovskites von Zhang, Xie, Shen, Jimmy-Xuan, Turiansky, Mark E., Van de Walle, Chris G.

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Tutorial: Defects in semiconductors—Combining experiment and theory von Alkauskas, Audrius, McCluskey, Matthew D., Van de Walle, Chris G.

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Correctly Assessing Defect Tolerance in Halide Perovskites von Zhang, Xie, Turiansky, Mark E, Van de Walle, Chris G

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Structural and electronic properties of Ga2O3-Al2O3 alloys von Peelaers, Hartwin, Varley, Joel B., Speck, James S., Van de Walle, Chris G.

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High-voltage field effect transistors with wide-bandgap β -Ga2O3 nanomembranes von Hwang, Wan Sik, Verma, Amit, Peelaers, Hartwin, Protasenko, Vladimir, Rouvimov, Sergei, (Grace) Xing, Huili, Seabaugh, Alan, Haensch, Wilfried, de Walle, Chris Van, Galazka, Zbigniew, Albrecht, Martin, Fornari, Roberto, Jena, Debdeep

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Shallow versus deep nature of Mg acceptors in nitride semiconductors von Lyons, John L, Janotti, Anderson, Van de Walle, Chris G

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First-principles theory of the luminescence lineshape for the triplet transition in diamond NV centres von Alkauskas, Audrius, Buckley, Bob B, Awschalom, David D, Van de Walle, Chris G

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Hydrogen multicentre bonds von Janotti, Anderson, Van de Walle, Chris G

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Piezoelectric effect and polarization switching in Al1−xScxN von Wang, Haochen, Adamski, Nicholas, Mu, Sai, Van de Walle, Chris G.

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Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes von Kioupakis, Emmanouil, Yan, Qimin, Van de Walle, Chris G.

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Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN von Moses, Poul Georg, Miao, Maosheng, Yan, Qimin, Van de Walle, Chris G.

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Sub-band-gap absorption in Ga2O3 von Peelaers, Hartwin, Van de Walle, Chris G.

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Effects of strain on the band structure of group-III nitrides von Yan, Qimin, Rinke, Patrick, Janotti, Anderson, Scheffler, Matthias, Van de Walle, Chris G.

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Phase transformations upon doping in WO3 von Wang, Wennie, Janotti, Anderson, Van de Walle, Chris G.

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Origins of optical absorption and emission lines in AlN von Yan, Qimin, Janotti, Anderson, Scheffler, Matthias, Van de Walle, Chris G.

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Universal alignment of hydrogen levels in semiconductors, insulators and solutions von Van de Walle, Chris G, Neugebauer, J

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Computationally predicted energies and properties of defects in GaN von Lyons, John L., Van de Walle, Chris G.

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Exciton-dominated Dielectric Function of Atomically Thin MoS2 Films von Yu, Yiling, Yu, Yifei, Cai, Yongqing, Li, Wei, Gurarslan, Alper, Peelaers, Hartwin, Aspnes, David E., Van de Walle, Chris G., Nguyen, Nhan V., Zhang, Yong-Wei, Cao, Linyou

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