Band-gap narrowing in GaAs using a capacitance method von VAN MIEGHEM, P, MERTENS, R. P, BORGHS, G, VAN OVERSTRAETEN, R. J

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High-temperature H2 anneal of interface defects in electron-beam-irradiated MNOS structures von Schols, G. A., Maes, H. E., Van Overstraeten, R. J.

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Theory of the junction capacitance of an abrupt diode von VAN MIEGHEM, P, MERTENS, R. P, VAN OVERSTRAETEN, R. J

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Application of open circuit voltage decay to the characterisation of heavy doping parameters in a p+ emitter of a junction diode von Totterdell, D.H.J., Leake, J.W., Jain, S.C., Mertens, R.P., Van Overstraeten, R.J.

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Rigorous analysis of the reverse recovery process in junction diodes allowing for arbitrary widths of the base and the emitter as well as heavy doping effects von Rauh, H., Jain, S.C., Mertens, R.P., Van Overstraeten, R.J.

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Biotelemetry and Radiotracking of Wild Birds: Portable Device Using Solar Cells Power Supply von Aucouturier, J. L., Chaillou, A., Nicolas, G., Canivenc, R., Govaerts, R., Mertens, R., Lauwers, F., Van Overstraeten, R. J., Marques, M.

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Accurate Theoretical Arsenic Diffusion Profiles in Silicon from Processing Data von Jain, R. K., Van Overstraeten, R. J.

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An analytical model for the determination of the transient response of CML and ECL gates von Ghannam, M.Y., Mertens, R.P., van Overstraeten, R.J.

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Calculation of the diffusion induced stresses in silicon von Jain, R. K., van Overstraeten, R. J.

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Theory of thermal dielectric relaxation and direct determination of trap parameters von Gupta, H M, Overstraeten, R J van

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An analytical model for the determinatin of the transient response of CML ad ECL gates von GHANNAM, M. Y, MERTENS, R. P, VAN OVERSTRAETEN, R. J

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Measurement of the minority-carrier transport parameters in heavily doped silicon von Mertens, R.P., Van Meerbergen, J.L., Nijs, J.F., Van Overstraeten, R.J.

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Transport equations in heavy doped silicon von Van Overstraeten, R.J., DeMan, H.J., Mertens, R.P.

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Theory of the MOS transistor in weak inversion-new method to determine the number of surface states von Van Overstraeten, R.J., Declerck, G.J., Muls, P.A.

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Short‐ and medium‐term outcomes following primary ileocaecal resection for Crohn's disease in two specialist centres von de Buck van Overstraeten, A., Eshuis, E. J., Vermeire, S., Van Assche, G., Ferrante, M., D'Haens, G. R., Ponsioen, C. Y., Belmans, A., Buskens, C. J., Wolthuis, A. M., Bemelman, W. A., D'Hoore, A.

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Foreword and introduction von Van Overstraeten, R.J., Mertens, R.P., A., Neugroschel

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Effect of surface recombination on the transient decay of excess carriers produced by short wavelength laser pulses von Tyagi, M.S., Nijs, J.F., Van Overstraeten, R.J.

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Short‐term outcomes of surgical treatment for primary ileocaecal Crohn's disease: Results of the Crohn's(urg) study, a multicentre, retrospective, comparative analysis between infl... von Avellaneda, Nicolas, Pellino, Gianluca, Maroli, Annalisa, Tottrup, Anders, Bislenghi, Gabriele, Colpaert, Jan, D'Hoore, Andre, Carvello, Michele, Giorgi, Lorenzo, Juachon, Patrizia, Harsløf, Sanne, Buck Van Overstraeten, Anthony, Olivera, Pablo A., Gomez, Javier, Holubar, Stefan D., Naranjo, Eddy Lincango, Steele, Scott R., Merchea, Amit, Shaker, Andrew, Gallostra, Marc Marti, Kraft, Miquel, Kotze, Paulo Gustavo, Maruyama, Beatriz Yuki, Wexner, Steven D., Garoufalia, Zoe, Chen, Zhihui, Hahnloser, Dieter, Rrupa, Djana, Buskens, Christianne, Haanappel, Anouck, Warusavitarne, Janindra, Williams, Katherine J., Christensen, Peter, Wolthuis, Albert, Potolicchio, Analia, Spinelli, Antonino

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Calculation of the emitter efficiency of bipolar transistors von Mertens, R.P., DeMan, H.J., Van Overstraeten, R.J.

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Inadequacy of the classical theory of the MOS transistor operating in weak inversion von Van Overstraeten, R.J., Declerck, G., Broux, G.L.

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