PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation von Gildenblat, G., Xin Li, Wu, W., Hailing Wang, Jha, A., van Langevelde, R., Smit, G.D.J., Scholten, A.J., Klaassen, D.B.M.

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Analog circuits in ultra-deep-submicron CMOS von Annema, A.-J., Nauta, B., van Langevelde, R., Tuinhout, H.

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Noise modeling for RF CMOS circuit simulation von Scholten, A.J., Tiemeijer, L.F., van Langevelde, R., Havens, R.J., Zegers-van Duijnhoven, A.T.A., Venezia, V.C.

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PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations von Wu, W., Li, X., Gildenblat, G., Workman, G.O., Veeraraghavan, S., McAndrew, C.C., van Langevelde, R., Smit, G.D.J., Scholten, A.J., Klaassen, D.B.M., Watts, J.

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Effect of gate-field dependent mobility degradation on distortion analysis in MOSFETs von van Langevelde, R., Klaassen, F.M.

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RF-CMOS performance trends von Woerlee, P.H., Knitel, M.J., van Langevelde, R., Klaassen, D.B.M., Tiemeijer, L.F., Scholten, A.J., Zegers-van Duijnhoven, A.T.A.

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RF Characterization of Schottky Diodes in 65-nm CMOS von Matters-Kammerer, Marion K, Tripodi, L, van Langevelde, R, Cumana, J, Jansen, Rolf H

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A surface-potential-based high-voltage compact LDMOS transistor model von Aarts, A., D'Halleweyn, N., van Langevelde, R.

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Generalizations of the Klaassen-Prins equation for calculating the noise of semiconductor devices von Paasschens, J.C.J., Scholten, A.J., van Langevelde, R.

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The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications von Scholten, A.J., Smit, G.D.J., De Vries, B.A., Tiemeijer, L.F., Croon, J.A., Klaassen, D.B.M., van Langevelde, R., Xin Li, Weimin Wu, Gildenblat, G.

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Benchmark Tests for MOSFET Compact Models With Application to the PSP Model von Xin Li, Weimin Wu, Jha, A., Gildenblat, G., van Langevelde, R., Smit, G.D.J., Scholten, A.J., Klaassen, D.B.M., McAndrew, C.C., Watts, J., Olsen, C.M., Coram, G.J., Chaudhry, S., Victory, J.

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The Physical Background of JUNCAP2 von Scholten, A.J., Smit, G.D.J., Durand, M., Van Langevelde, R., Klaassen, D.B.M.

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An ultra-low-power 868/915 MHz RF transceiver for wireless sensor network applications von van Langevelde, R., van Elzakker, M., van Goor, D., Termeer, H., Moss, J., Davie, A.J.

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A Unified Nonquasi-Static MOSFET Model for Large-Signal and Small-Signal Simulations von Wang, H., Li, X., Wu, W., Gildenblat, G., Van Langevelde, R., Smit, G.D.J., Scholten, A.J., Klaassen, D.B.M.

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QUBiC4plus: a cost-effective BiCMOS manufacturing technology with elite passive enhancements optimized for 'silicon-based' RF-system-in-package environment von Deixler, P., Letavic, T., Mahatdejkul, T., Bouttement, Y., Brock, R., Tan, P.C., Saikumar, V., Rodriguez, A., Colclaser, R., Kellowan, P., Sun, H., Bell, N., Bower, D., Yao, A., van Langevelde, R., Vanhoucke, T., van Noort, W.D., Hurkx, G.A.M., Crespo, D., Biard, C., Bardy, S., Slotboom, J.W.

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An explicit surface-potential-based MOSFET model for circuit simulation von van Langevelde, Ronald, Klaassen, François M

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Unified non-quasi-static MOSFET model for large-signal and small-signal simulations von Wang, H., Li, X., Wu, W., Gildenblat, G., van Langevelde, R., Smitt, G.D.J., Scholten, A.J., Klaassen, D.B.M.

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A Robust and Physically Based Compact SOI-LDMOS Model von Aarts, A., van Langevelde, R.

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Noise in DMOS transistors in a BICMOS-technology von Van Langevelde, R., Blieck, S., Vandamme, L.K.J.

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An advanced explicit surface potential model physically accounting for the quantization effects in deep-submicron MOSFETs von Prégaldiny, Fabien, Lallement, Christophe, van Langevelde, Ronald, Mathiot, Daniel

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