Stackable nonvolatile memory with ultra thin polysilicon film and low-leakage (Ti, Dy) sub(xO) sub(y) for low processing temperature and low operating voltages von Lee, Jaegoo, Cha, Judy J, Barron, Sara, Muller, David A, Van Dover, RBruce, Amponsah, Ebenezer K, Hou, Tuo-Hung, Raza, Hassan, Kan, Edwin C

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