Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition von Tian, L., Ponton, S., Benz, M., Crisci, A., Reboud, R., Giusti, G., Volpi, F., Rapenne, L., Vallée, C., Pons, M., Mantoux, A., Jiménez, C., Blanquet, E.

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Hematopoietic stem cell transplantation for Wiskott-Aldrich syndrome: an EBMT Inborn Errors Working Party analysis von Albert, Michael H., Slatter, Mary A., Gennery, Andrew R., Güngör, Tayfun, Bakunina, Katerina, Markovitch, Benyamin, Hazelaar, Sheree, Sirait, Tiarlan, Courteille, Virginie, Aiuti, Alessandro, Aleinikova, Olga V., Balashov, Dmitry, Bernardo, Maria Ester, Bodova, Ivana, Bruno, Benedicte, Cavazzana, Marina, Chiesa, Robert, Fischer, Alain, Hauck, Fabian, Ifversen, Marianne, Kałwak, Krzysztof, Klein, Christoph, Kulagin, Alexander, Kupesiz, Alphan, Kuskonmaz, Baris, Lindemans, Caroline A., Locatelli, Franco, Lum, Su Han, Maschan, Alexey, Meisel, Roland, Moshous, Despina, Porta, Fulvio, Sauer, Martin G., Sedlacek, Petr, Schulz, Ansgar, Suarez, Felipe, Vallée, Tanja C., Winiarski, Jacek H., Zecca, Marco, Neven, Bénédicte, Veys, Paul, Lankester, Arjan C.

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Impedance and electric modulus study of amorphous TiTaO thin films: highlight of the interphase effect von Rouahi, A, Kahouli, A, Challali, F, Besland, M P, Vallée, C, Yangui, B, Salimy, S, Goullet, A, Sylvestre, A

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Persistence of Yellow Fever Vaccine–Induced Antibodies After Solid Organ Transplantation von Wyplosz, B., Burdet, C., François, H., Durrbach, A., Duclos‐Vallée, J. C., Mamzer‐Bruneel, M.‐F., Poujol, P., Launay, O., Samuel, D., Vittecoq, D., Consigny, P. H.

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Investigation into the effect of a PECVD-deposited SiOx chamber coating on the selective, radical-based NF3 etching of TaN with respect to BEOL low-k von Otto, I. V., Vallée, C., Kal, S., Biolsi, P.

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Resistance switching in HfO2 metal-insulator-metal devices von Gonon, P., Mougenot, M., Vallée, C., Jorel, C., Jousseaume, V., Grampeix, H., El Kamel, F.

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Infections in solid organ transplant HIV-infected patients von Miro, J.M, Agüero, F., Duclos-Vallée, J.-C., Mueller, N.J, Grossi, P., Moreno, A.

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Multidomain spectral method for the Gauss hypergeometric function von Crespo, S., Fasondini, M., Klein, C., Stoilov, N., Vallée, C.

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Physics beyond colliders at CERN: beyond the Standard Model working group report von Beacham, J, Burrage, C, Curtin, D, De Roeck, A, Evans, J, Feng, J L, Gatto, C, Gninenko, S, Hartin, A, Irastorza, I, Jaeckel, J, Jungmann, K, Kirch, K, Kling, F, Knapen, S, Lamont, M, Lanfranchi, G, Lazzeroni, C, Lindner, A, Martinez-Vidal, F, Moulson, M, Neri, N, Papucci, M, Pedraza, I, Petridis, K, Pospelov, M, Rozanov, A, Ruoso, G, Schuster, P, Semertzidis, Y, Spadaro, T, Vallée, C, Wilkinson, G

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Impact of Oxidation on Ge2Sb2Te5 and GeTe Phase-Change Properties von Gourvest, E., Pelissier, B., Vallée, C., Roule, A., Lhostis, S., Maitrejean, S.

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From MEMRISTOR to MEMImpedance device von Wakrim, T., Vallée, C., Gonon, P., Mannequin, C., Sylvestre, A.

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Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor von Maréchal, A., Aoukar, M., Vallée, C., Rivière, C., Eon, D., Pernot, J., Gheeraert, E.

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Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique von Kassmi, M., Pointet, J., Gonon, P., Bsiesy, A., Vallée, C., Jomni, F.

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High capacitance density of 185 nF/mm2 achieved in three-dimensional MIM structures using TiO2 as a dielectric von Chaker, A., Gonon, P., Vallée, C., Bsiesy, A.

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Ag/HfO2-based conductive bridge memories elaborated by atomic layer deposition: impact of inert electrode and HfO2 crystallinity on resistive switching mechanisms von Saadi, M., Gonon, P., Vallée, C., Jomni, F., Jalaguier, E., Bsiesy, A.

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Atomistic mechanisms of copper filament formation and composition in Al2O3-based conductive bridge random access memory von Nail, C., Blaise, P., Molas, G., Bernard, M., Roule, A., Toffoli, A., Perniola, L., Vallée, C.

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On the mechanisms of cation injection in conducting bridge memories: The case of HfO2 in contact with noble metal anodes (Au, Cu, Ag) von Saadi, M., Gonon, P., Vallée, C., Mannequin, C., Grampeix, H., Jalaguier, E., Jomni, F., Bsiesy, A.

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Modeling of nonlinearities in the capacitance-voltage characteristics of high-k metal-insulator-metal capacitors von Gonon, P., Vallée, C.

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Control of carbon content in amorphous GeTe films deposited by plasma enhanced chemical vapor deposition (PE-MOCVD) for phase-change random access memory applications von Aoukar, M, Szkutnik, P D, Jourde, D, Pelissier, B, Michallon, P, Noé, P, Vallée, C

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Reply to “A strong message is needed to address the issue of HCC recurrence after DAA therapy” von Carrat, F, Nahon, P, Duclos-Vallée, J.C, Pageaux, G.P, Fontaine, H, Pol, S

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