Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study von Valeri V. Afanas'ev

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Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes von Pešić, Milan, Knebel, Steve, Geyer, Maximilian, Schmelzer, Sebastian, Böttger, Ulrich, Kolomiiets, Nadiia, Afanas'ev, Valeri V., Cho, Kyuho, Jung, Changhwa, Chang, Jaewan, Lim, Hanjin, Mikolajick, Thomas, Schroeder, Uwe

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The origin of negative charging in amorphous Al 2 O 3 films: the role of native defects von Dicks, Oliver A, Cottom, Jonathon, Shluger, Alexander L, Afanas'ev, Valeri V

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Nature of the filament formed in HfO2-based resistive random access memory von De Stefano, Francesca, Houssa, Michel, Afanas'ev, Valeri V., Kittl, Jorge A., Jurczak, Małgorzata, Stesmans, Andre

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Ultra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applications von Knebel, Steve, Pešić, Milan, Cho, Kyuho, Chang, Jaewan, Lim, Hanjin, Kolomiiets, Nadiia, Afanas'ev, Valeri V., Muehle, Uwe, Schroeder, Uwe, Mikolajick, Thomas

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The origin of negative charging in amorphous Al2O3 films: the role of native defects von Dicks, Oliver A, Cottom, Jonathon, Shluger, Alexander L, Afanas'ev, Valeri V

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Material-Selective Doping of 2D TMDC through AlxOy Encapsulation von Leonhardt, Alessandra, Chiappe, Daniele, Afanas'ev, Valeri V, El Kazzi, Salim, Shlyakhov, Ilya, Conard, Thierry, Franquet, Alexis, Huyghebaert, Cedric, de Gendt, Stefan

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Intrinsic charge trapping in amorphous oxide films: status and challenges von Strand, Jack, Kaviani, Moloud, Gao, David, El-Sayed, Al-Moatasem, Afanas'ev, Valeri V, Shluger, Alexander L

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Capacitive Memory Window with Non-Destructive Read in Ferroelectric Capacitors von Mukherjee, Shankha, Bizindavyi, Jasper, Clima, Sergiu, Popovici, Mihaela I., Piao, Xiaoyu, Katcko, Kostantine, Catthoor, Francky, Yu, Shimeng, Afanas'ev, Valeri V., Van Houdt, Jan

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A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From I – V , C – V , and G – V Measurements von Padovani, Andrea, Kaczer, Ben, Pesic, Milan, Belmonte, Attilio, Popovici, Mihaela, Nyns, Laura, Linten, Dimitri, Afanas'ev, Valeri V., Shlyakhov, Ilya, Lee, Younggon, Park, Hokyung, Larcher, Luca

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Intrinsic electron trapping in amorphous oxide von Strand, Jack, Kaviani, Moloud, Afanas'ev, Valeri V, Lisoni, Judit G, Shluger, Alexander L

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Silicene on non-metallic substrates： Recent theoretical and experimental advances von Scalise, Emilio, Iordanidou, Kostantina, Afanas’ev, Valeri V., Stesmans, André, Houssa, Michel

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A Theoretical Analysis of Ferroelectric Switching Physics in Metal/Ferroelectric/IGZO Stack Toward Interlayer-Free FeFETs von Chen, Zhuo, Ronchi, Nicolo, Tang, Hongwei, Walke, Amey M., Izmailov, Roman, Ioana Popovici, Mihaela, Van den Bosch, Geert, Rosmeulen, Maarten, Afanas'ev, Valeri V., Van Houdt, Jan

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Inhibition of Oxygen Scavenging by TiN at the TiN/SiO2 Interface by Atomic-Layer-Deposited Al2O3 Protective Interlayer von Filatova, Elena O, Sakhonenkov, Sergei S, Konashuk, Aleksei S, Kasatikov, Sergey A, Afanas’ev, Valeri V

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Interactions of hydrogen with amorphous hafnium oxide von Kaviani, Moloud, Afanas'ev, Valeri V., Shluger, Alexander L.

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Metallization-Induced Oxygen Deficiency of γ‑Al2O3 Layers von Filatova, Elena O, Konashuk, Aleksei S, Schaefers, Franz, Afanas’ev, Valeri V

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Hydrogen induced dipole at the Pt/oxide interface in MOS devices von Kolomiiets, Nadiia M., Afanas'ev, Valeri V., Opsomer, Karl, Houssa, Michel, Stesmans, Andre

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Leakage Control in 0.4-nm EOT Ru/SrTiOx/Ru Metal-Insulator-Metal Capacitors: Process Implications von Swerts, Johan, Popovici, Mihaela, Kaczer, Ben, Aoulaiche, Marc, Redolfi, Augusto, Clima, Sergiu, Caillat, Christian, Wan Chih Wang, Afanasev, Valeri V., Jourdan, Nicolas, Olk, Christina, Hody, Hubert, Van Elshocht, Sven, Jurczak, Malgorzata

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Conduction barrier offset engineering for DRAM capacitor scaling von Pešić, Milan, Knebel, Steve, Cho, Kyuho, Jung, Changhwa, Chang, Jaewan, Lim, Hanjin, Kolomiiets, Nadiia, Afanas’ev, Valeri V., Mikolajick, Thomas, Schroeder, Uwe

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Low leakage stoichiometric SrTiO3 dielectric for advanced metal-insulator-metal capacitors von Popovici, Mihaela, Kaczer, Ben, Afanas'ev, Valeri V., Sereni, Gabriele, Larcher, Luca, Redolfi, Augusto, Elshocht, Sven Van, Jurczak, Malgorzata

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