A New NBTI Model Based on Hole Trapping and Structural Relaxation in MOS Dielectrics von Ielmini, D., Manigrasso, M., Gattel, F., Valentini, M.G.

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Micro breakdown in small-area ultrathin gate oxides von Cellere, G., Larcher, L., Valentini, M.G., Paccagnella, A.

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Influence of dielectric breakdown on MOSFET drain current von Cellere, G., Paccagnella, A., Mazzocchi, A., Valentini, M.G.

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FGA effects on plasma-induced damage: beyond the appearances von Cellere, G., Paccagnella, A., Valentini, M.G.

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Different nature of process-induced and stress-induced defects in thin SiO2 layers von Cellere, G., Valentini, M.G., Pantisano, L., Cheung, K.P., Paccagnella, A.

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Plasma-induced micro breakdown in small-area MOSFETs von Cellere, G., Larcher, L., Valentini, M.G., Paccagnella, A.

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Depassivation of latent plasma damage in pMOS devices von Pantisano, L., Paccagnella, A., Colombo, P., Valentini, M.G.

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Effect of channel width, length, and latent damage on NBTI von Cellere, G., Valentini, M.G., Paccagnella, A.

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Different nature of process-induced and stress-induced defects in thin SiO 2 layers von Cellere, G., Valentini, M.G., Pantisano, L., Cheung, K.P., Paccagnella, A.

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Influence of process parameters on plasma damage during inter-metal dielectric deposition von Cellere, G., Valentini, M.G., Caminati, M., Paccagnella, A.

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Plasma-induced Si/SiO2 interface damage in CMOS von CELLERE, G, VALENTINI, M. G, PACCAGNELLA, A

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Plasma-induced Si/SiO 2 interface damage in CMOS von Cellere, G, Valentini, M.G, Paccagnella, A

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Reliability assessment of multi-via Cu-damascene structures by wafer-level isothermal electromigration tests von Marras, A., Impronta, M., De Munari, I., Valentini, M.G., Scorzoni, A.

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Radiation-induced depassivation of latent plasma damage von Cellere, G., Paccagnella, A., Pantisano, L., Valentini, M.G., Flament, O., Mousseau, O., Fuochi, P.G.

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Low-field latent plasma damage depassivation in thin-oxide MOS von Cellere, G., Paccagnella, A., Pantisano, L., Colombo, P., Valentini, M.G.

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Depassivation of latent plasma damage in nMOSFETs von Cellere, G., Pantisano, L., Valentini, M.G., Paccagnella, A.

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P/sup 2/ID in a modern CMOS technology von Cellere, G., Valentini, M.G., Caminati, M., Paccagnella, A.

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Correlation between soft breakdown and plasma process induced damage von Cellere, G., Valentini, M.G., Paccagnella, A.

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Plasma damage impact on nMOS electrical characteristics during a CCS stress von Pantisano, L., Paccagnelle, A., Colombo, P., Valentini, M.G.

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Plasma induced damage from via etching in pMOSFETs von Cellere, G., Valentini, M.G., Baraldo, A., Paccagnella, A.

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