Influence of the AlInN Thickness on the Photovoltaic Characteristics of AlInN on Si Solar Cells Deposited by RF Sputtering von Blasco, Rodrigo, Núñez‐Cascajero, Arántzazu, Jiménez‐Rodríguez, Marco, Montero, Daniel, Grenet, Louis, Olea, Javier, Naranjo, Fernando B., Valdueza‐Felip, Sirona

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Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells von Valdueza-Felip, Sirona, Rigutti, Lorenzo, Naranjo, Fernando B., Lacroix, Bertrand, Fernández, Susana, Ruterana, Pierre, Julien, François H., González-Herráez, Miguel, Monroy, Eva

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InGaN/GaN multiple-quantum well heterostructures for solar cells grown by MOVPE: case studies von Mukhtarova, Anna, Valdueza-Felip, Sirona, Durand, Christophe, Pan, Qing, Grenet, Louis, Peyrade, David, Bougerol, Catherine, Chikhaoui, Walf, Monroy, Eva, Eymery, Joël

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Improved conversion efficiency of as-grown InGaN/GaN quantum-well solar cells for hybrid integration von Valdueza-Felip, Sirona, Mukhtarova, Anna, Grenet, Louis, Bougerol, Catherine, Durand, Christophe, Eymery, Joel, Monroy, Eva

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Study of high In-content AlInN deposition on p-Si(111) by RF-sputtering von Núñez-Cascajero, Arántzazu, Monteagudo-Lerma, Laura, Valdueza-Felip, Sirona, Navío, Cristina, Monroy, Eva, González-Herráez, Miguel, Naranjo, Fernando B.

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Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells von Redaelli, Luca, Mukhtarova, Anna, Ajay, Akhil, Núñez-Cascajero, Arántzazu, Valdueza-Felip, Sirona, Bleuse, Joël, Durand, Christophe, Eymery, Joël, Monroy, Eva

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Photovoltaic Response of InGaN/GaN Multiple-Quantum Well Solar Cells von Valdueza-Felip, Sirona, Mukhtarova, Anna, Pan, Qing, Altamura, Giovanni, Grenet, Louis, Durand, Christophe, Bougerol, Catherine, Peyrade, David, González-Posada, Fernando, Eymery, Joel, Monroy, Eva

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III-nitride-based waveguides for ultrafast all-optical signal processing at 1.55 μm von Monteagudo-Lerma, Laura, Naranjo, Fernando B., Valdueza-Felip, Sirona, Jiménez-Rodríguez, Marco, Monroy, Eva, Postigo, Pablo A., Corredera, Pedro, González-Herráez, Miguel

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High-surface-quality nanocrystalline InN layers deposited on GaN templates by RF sputtering von Valdueza-Felip, Sirona, Naranjo, Fernando B., González-Herráez, Miguel, Lahourcade, Lise, Monroy, Eva, Fernández, Susana

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Amorphous Silicon Films and Nanocolumns Deposited on Sapphire and GaN by DC Sputtering von Sun, Michael, Valdueza-Felip, Sirona, Naranjo, Fernando B.

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Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering von Valdueza-Felip, S., Núñez-Cascajero, A., Blasco, R., Montero, D., Grenet, L., de la Mata, M., Fernández, S., Rodríguez-De Marcos, L., Molina, S. I., Olea, J., Naranjo, F. B.

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Effect of temperature and excitation power on down-conversion process in Tb3+/Yb3+-activated silica-hafnia glass-ceramic films von El Amrani, Salima, Sun, Michael, Valdueza-Felip, Sirona, Naranjo, Fernando B., Britel, Mohammed Reda, Ferrari, Maurizio, Bouajaj, Adel

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Low‐to‐Mid Al Content (x = 0–0.56) AlxIn1−xN Layers Deposited on Si(100) by Radio‐Frequency Sputtering von Blasco, Rodrigo, Valdueza-Felip, Sirona, Montero, Daniel, Sun, Michael, Olea, Javier, Naranjo, Fernando B.

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Low‐to‐Mid Al Content ( x  = 0–0.56) Al x In 1− x N Layers Deposited on Si(100) by Radio‐Frequency Sputtering von Blasco, Rodrigo, Valdueza-Felip, Sirona, Montero, Daniel, Sun, Michael, Olea, Javier, Naranjo, Fernando B.

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Al x In 1-x N on Si (100) Solar Cells (x = 0-0.56) Deposited by RF Sputtering von Valdueza-Felip, Sirona, Blasco, Rodrigo, Olea, Javier, Díaz-Lobo, Alba, Braña, Alejandro F, Naranjo, Fernando B

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Comparison of the Material Quality of Al[sub.x]In[sub.1−x]N at Low Temperature by Reactive RF Sputtering von Sun, Michael, Blasco, Rodrigo, Nwodo, Julian, de la Mata, María, Molina, Sergio I, Ajay, Akhil, Monroy, Eva, Valdueza-Felip, Sirona, Naranjo, Fernando B

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Nonlinear Absorption at Optical Telecommunication Wavelengths of InN Films Deposited by RF Sputtering von Valdueza-Felip, S., Monteagudo-Lerma, L., Mangeney, J., Gonzalez-Herraez, M., Julien, F. H., Naranjo, F. B.

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Comparison of the Material Quality of AlxIn1−xN (x—0–0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering von Sun, Michael, Blasco, Rodrigo, Nwodo, Julian, de la Mata, María, Molina, Sergio I., Ajay, Akhil, Monroy, Eva, Valdueza-Felip, Sirona, Naranjo, Fernando B.

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AlxIn1−xN on Si (100) Solar Cells (x = 0–0.56) Deposited by RF Sputtering von Valdueza-Felip, Sirona, Blasco, Rodrigo, Olea, Javier, Díaz-Lobo, Alba, Braña, Alejandro F., Naranjo, Fernando B.

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n-AlInN/p-Si Heterojunction Solar Cell Growth by RF Sputtering via Down-Converting Layers Co-Dopedwith Tb 3+ /Yb 3+ Rare Earth Ions von EL Amrani, Salima, Sun, Mickael, Britel, M.Reda, Bouajaj, Adel, Valdueza Felip, Sirona, Naranjo, Frenando. B.

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