Floating body effects in polysilicon thin-film transistors von Valdinoci, M., Colalongo, L., Baccarani, G., Fortunato, G., Pecora, A., Policicchio, I.

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Soufisme, religion et medecine en Islam indien By FABRIZIO SPEZIALE von Valdinoci, M.

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Analysis of conductivity degradation in gold/platinum-doped silicon von Valdinoci, M., Colalongo, L., Pellegrini, A., Rudan, M.

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Determination of hot-carrier induced interface state density in polycrystalline silicon thin-film transistors von Mariucci, L., Fortunato, G., Carluccio, R., Pecora, A., Giovannini, S., Massussi, F., Colalongo, L., Valdinoci, M.

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Numerical analysis of poly-TFTs under off conditions von Colalongo, L, Valdinoci, M, Baccarani, G, Migliorato, P, Tallarida, G, Reita, C

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Dynamic modeling of amorphous- and polycrystalline-silicon devices von Colalongo, L., Valdinoci, M., Pellegrini, A., Rudan, M.

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Analysis of electrical characteristics of polycrystalline silicon thin-film transistors under static and dynamic conditions von Valdinoci, M., Colalongo, L., Baccarani, G., Pecora, A., Policicchio, I., Fortunato, G., Plais, F., Legagneux, P., Reita, C., Pribat, D.

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Electron and hole mobility in silicon at large operating temperatures - Part I: Bulk mobility von Reggiani, Susanna, Valdinoci, Marina, Colalongo, Luigi, Rudan, Massimo, Baccarani, Giorgio, Stricker, Andreas D, Illien, Fridolin, Felber, Norbert, Fichtner, Wolfgang, Zullino, Lucia

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Electron and hole mobility in silicon at large operating temperatures. I. Bulk mobility von Reggiani, S., Valdinoci, M., Colalongo, L., Rudan, M., Baccarani, G., Stricker, A.D., Illien, F., Felber, N., Fichtner, W., Zullino, L.

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AC analysis of amorphous silicon devices von Pellegrini, A., Colalongo, L., Valdinoci, M., Rudan, M.

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Investigation on anomalous leakage currents in poly-TFTs including dynamic effects von Colalongo, L., Valdinoci, M., Baccarani, G.

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An Analytical, Temperature-dependent Model for Majority- and Minority-carrier Mobility in Silicon Devices von Reggiani, Susanna, Valdinoci, Marina, Colalongo, Luigi, Rudan, Massimo, Baccarani, Giorgio

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Analysis of Hot Carrier Induced Degradation in Polycrystalline Silicon Thin Film Transistors von Fortunato, G., Pecora, A., Tallarida, G., Mariucci, L., Valdinoci, M., Gnudi, A.

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Dynamic model of silicon devices with energy-localized trap centers von Valdinoci, M., Colalongo, L., Rudan, M., Coffa, S.

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Transient Analysis of Silicon Devices Using the Hydrodynamic Model von Colalongo, Luigi, Valdinoci, Marina, Gnudi, Antonio, Rudan, Massimo

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Dynamic Behavior of a-Si Devices for Flat-Panel Displays von Colalongo, L., Valdinoci, M., Pellegrini, A., Rudan, M.

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A Dynamic Model of Gold/Platinum Doped Devices von Valdinoci, M., Colalongo, L., Coffa, S., Rudan, M.

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Leakage Current in Polysilicon TFTs: Experiments and Interpretation von Colalongo, L., Valdinoci, M., Baccarani, G., Migliorato, P., Tallarida, G., Reita, C.

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Investigation on the Kink Effect in Poly-TFTs von Valdinoci, M., Colalongo, L., Baccarani, G., Fortunato, G., Pecora, A., Policicchio, I.

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A physically-based analytical model for a-Si devices including drift and diffusion currents von Colalongo, L., Valdinoci, M., Rudan, M.

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