Carrier transport in SiC crystals and radiation detectors as affected by defect traps and inhomogeneities von Kažukauskas, V., Kalendra, V., Vaitkus, J.-V.

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Carrier transport and capture in GaN single crystals and radiation detectors and effect of the neutron irradiation von Kažukauskas, V., Kalendra, V., Vaitkus, J.-V.

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Effects of the high-energy proton irradiation on the properties of GaN ionizing radiation detectors von Kažukauskas, V., Kalendra, V., Jasiulionis, R., Vaitkus, J.-V.

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Influence of irradiation by 24 GeV protons on the properties of 4H–SiC radiation detectors von Kažukauskas, V., Jasiulionis, R., Kalendra, V., Vaitkus, J.-V.

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The non-exponential and non-Auger-like time dependence of non-equilibrium free carrier concentration decay in a semiconductor with two deep levels at high injection rates von Ža¸sinas, E., Vaitkus, J.V.

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Update on scribe–cleave–passivate (SCP) slim edge technology for silicon sensors: Automated processing and radiation resistance von Fadeyev, V., Ely, S., Galloway, Z., Ngo, J., Parker, C., Sadrozinski, H.F.-W., Christophersen, M., Phlips, B.F., Pellegrini, G., Rafi, J.M., Quirion, D., Dalla Betta, G.-F., Boscardin, M., Casse, G., Gorelov, I., Hoeferkamp, M., Metcalfe, J., Seidel, S., Gaubas, E., Ceponis, T., Vaitkus, J.V.

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Study of surface recombination on cleaved and passivated edges of Si detectors von Gaubas, E, Ceponis, T, Vaitkus, J V, Fadeyev, V, Ely, S, Galloway, Z, Sadrozinski, H F-W, Christophersen, M, Phlips, B F, Gorelov, I, Hoeferkamp, M, Metcalfe, J, Seidel, S

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Influence of Irradiation by High-Energy Protons on GaN Detectors von Kažukauskas, V., Kalendra, V., Vaitkus, J.-V, Jasiulionis, R.

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The effect of irradiation with high-energy protons on 4H-SiC detectors von Kažukauskas, V., Jasiulionis, R., Kalendra, V., Vaitkus, J. -V.

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Interaction of deep levels and potential fluctuations in scattering and recombination phenomena in semi-insulating GaAs von Kažukauskas, V., Storasta, J., Vaitkus, J.-V.

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Thermally stimulated currents in semi-insulating GaAs Schottky diodes and their simulation von KAVALIAUSKIENE, G, KAZUKAUSKAS, V, RINKEVICIUS, V, STORASTA, J, VAITKUS, J. V, BATES, R, O'SHEA, V, SMITH, K. M

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Transient electron transport in indium-doped semiinsulating GaAs von Kažukauskas, V., Storasta, J., Vaitkus, J.-V.

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Investigation of the surface recombination rate in polycrystalline films from the A 6 B 6 compound by the MW-PC method von Alimov, N E, Vaitkus, J V, Otajonov, S M, Botirov, K

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Investigation of the surface recombination rate in polycrystalline films from the A6B6 compound by the MW-PC method von Alimov, N E, Vaitkus, J V, Otajonov, S M, Botirov, K

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Study of polycrystalline CdTe films by contact and contactless pulsed photo-ionization spectroscopy von Gaubas, E., Čeponis, T., Dobrovolskas, D., Mickevičius, J., Pavlov, J., Rumbauskas, V., Vaitkus, J.V., Alimov, N., Otajonov, S.

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Variation of defect spectra in Si ionizing radiation detectors depending on irradiation von Kalendra, V., Kažukauskas, V., Vainorius, N., Vaitkus, J. V., Bozhko, V.

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Determination of light amplification processes in MOCVD grown ZnCdSe GRINSCH structures von Mikulskas, I, Brinkmann, D, Luterova, K, Tomasiunas, R, Hönerlage, B, Vaitkus, J.V, Aulombard, R.L, Cloitre, T

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The non-exponential and non-Auger-like time dependence of non-equilibrium free carrier concentration decay in a semiconductor with two deep levels at high injection rates von ZASINAS, E, VAITKUS, J. V

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Properties of CdS nanocrystallites embedded in to thin ZrO2 waveguides von MIKULSKAS, I, BERNSTEIN, E, PLENET, J. C, BOVIER, C, TOMASIUNAS, R, GRIVICKAS, V, VAITKUS, J. V, MUGNIER, J, DUMAS, J

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Waveguiding properties of CdS-doped SiO2-TiO2 films prepared by sol-gel method von JUODKAZIS, S, BERNSTEIN, E, PLENET, J. C, BOVIER, C, DUMAS, J, MUGNIER, J, VAITKUS, J. V

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