Electromigration behavior of dual-damascene Cu interconnects––Structure, width, and length dependences von Vairagar, A.V, Mhaisalkar, S.G, Krishnamoorthy, Ahila

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A Model for Understanding Electromigration-Induced Void Evolution in Dual-Inlaid Cu Interconnect Structures von Pete, D.J., Helonde, J.B., Vairagar, A.V., Mhaisalkar, S.G.

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Effect of surface treatment on electromigration in sub-micron Cu damascene interconnects von Vairagar, A.V., Mhaisalkar, S.G., Krishnamoorthy, Ahila

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Effect of interface modification on EM-induced degradation mechanisms in copper interconnects von Zschech, E., Meyer, M.A., Mhaisalkar, S.G., Vairagar, A.V., Krishnamoorthy, A., Engelmann, H.J., Sukharev, V.

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Electromigration in copper damascene interconnects: reservoir effects and failure analysis von Shao, Wei, Vairagar, A.V., Tung, Chih-Hang, Xie, Ze-Liang, Krishnamoorthy, Ahila, Mhaisalkar, S.G.

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A direct measurement of electromigration induced drift velocity in Cu dual damascene interconnects von Yan, M.Y., Tu, K.N., Vairagar, A.V., Mhaisalkar, S.G., Krishnamoorthy, Ahila

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Reservoir effect on electromigration mechanisms in dual-damascene Cu interconnect structures von Vairagar, A.V., Mhaisalkar, S.G., Meyer, M.A., Zschech, E., Krishnamoorthy, Ahila

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Study of Electromigration Induced Void Nucleation, Growth, and Movement in Cu Interconnects von Vairagar, A.V., Institute of Microelectronics, 11 Science Park Road, Singapore 117685, Mhaisalkar, S.G., Krishnamoorthy, A., Tu, K.N., Gusak, A.M., Zaporozhets, T., Meyer, M.A., Zschech, E.

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Current crowding effect on copper dual damascene via bottom failure for ULSI applications von Cher Ming Tan, Roy, A., Vairagar, A.V., Krishnamoorthy, A., Mhaisalkar, S.G.

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Geometry and Microstructure Effect on EM-Induced Copper Interconnect Degradation von Zschech, E., Ho, P.S., Schmeisser, D., Meyer, M.A., Vairagar, A.V., Schneider, G., Hauschildt, M., Kraatz, M., Sukharev, V.

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Assessing the Effect of Die Sealing in Cu/Low-k Structures von Kearney, A.V., Vairagar, A.V., Geisler, H., Zschech, E., Dauskardt, R.H.

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The effect of intermetallic bonding on blocking electromigration induced interfacial diffusion in Cu dual damascene interconnects von Minyu Yan, Jong-ook Suh, King Ning Tu, Vairagar, A.V., Mhaisalkar, S.G., Krishnamoorthy, A.

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Suppression of boron penetration by hot wire CVD polysilicon von Vairagar, A.V., Patil, S.B., Pete, D.J., Waghmare, P.C., Dusane, R.O., Venkatramani, N., Ramgopal Rao, V.

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