The impact of a classroom intervention on grade 10 students' argumentation skills, informal reasoning, and conceptual understanding of science von Venville, Grady J., Dawson, Vaille M.

Volltext

Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods von Vennéguès, P., Beaumont, B., Bousquet, V., Vaille, M., Gibart, P.

Volltext

Buffer free direct growth of GaN on 6H–SiC by metalorganic vapor phase epitaxy von Lahrèche, H., Leroux, M., Laügt, M., Vaille, M., Beaumont, B., Gibart, P.

Volltext

Epitaxial lateral overgrowth of GaN on Si (111) von Feltin, E., Beaumont, B., Vennéguès, P., Vaille, M., Gibart, P., Riemann, T., Christen, J., Dobos, L., Pécz, B.

Volltext

Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE von Vennéguès, P, Beaumont, B, Haffouz, S, Vaille, M, Gibart, P

Volltext

Study of open-core dislocations in GaN films on (0001) sapphire von Vennéguès, P., Beaumont, B., Vaille, M., Gibart, P.

Volltext

Microstructure of GaN epitaxial films at different stages of the growth process on sapphire (0 0 0 1) von VENNEGUES, P, BEAUMONT, B, VAILLE, M, GIBART, P

Volltext

A Two-Step Method for Epitaxial Lateral Overgrowth of GaN von Beaumont, B., Bousquet, V., Vennéguès, P., Vaille, M., Bouillé, A., Gibart, P., Dassonneville, S., Amokrane, A., Sieber, B.

Volltext

High quality GaN grown by MOVPE von Beaumont, B., Vaille, M., Boufaden, T., el Jani, B., Gibart, P.

Volltext

In situ growth monitoring of distributed GaN–AlGaN Bragg reflectors by metalorganic vapor phase epitaxy von Schenk, H. P. D., de Mierry, P., Vennéguès, P., Tottereau, O., Laügt, M., Vaille, M., Feltin, E., Beaumont, B., Gibart, P., Fernández, S., Calle, F.

Volltext

Measuring preparedness to teach with ICT von Forster, Patricia A, Dawson, Vaille M, Reid, Doug

Volltext

Lateral overgrowth of GaN on patterned GaN/sapphire substrate via selective metal organic vapour phase epitaxy: a route to produce self supported GaN substrates von Beaumont, B, Gibart, P, Vaille, M, Haffouz, S, Nataf, G, Bouillé, A

Volltext

Lateral overgrowth of high quality GaN layers on GaN/Al2O3 patterned substrates by halide vapour-phase epitaxy von NATAF, G, BEAUMONT, B, BOUILLE, A, HAFFOUZ, S, VAILLE, M, GIBART, P

Volltext

Comparative study of GaN layers grown on insulating AlN and conductive AlGaN buffer layers von Lahrèche, H, Vennéguès, P, Vaille, M, Beaumont, B, Laügt, M, Lorenzini, P, Gibart, P

Volltext

Vertical Cavity InGaN LEDs Grown by MOVPE von de Mierry, P., Bethoux, J.M., Schenk, H.P.D., Vaille, M., Feltin, E., Beaumont, B., Leroux, M., Dalmasso, S., Gibart, P.

Volltext

TEM Study of the Behavior of Dislocations during ELO of GaN von Bousquet, V., Vennéguès, P., Beaumont, B., Vaille, M., Gibart, P.

Volltext

Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy von Beaumont, B, Vaille, M, Nataf, G, Bouille, A, Guillaume, J-C, V6nnegues, P, Haffouz, S, Gibart, Pierre

Volltext

Microstructural analysis of III–V nitrides grown on 6H–SiC by metal–organic vapour phase epitaxy (MOVPE) von Lahreche, H, Vaille, M, Vennéguès, P, Laügt, M, Beaumont, B, Gibart, P

Volltext

High quality ELO-GAN layers on GaN/Al2O3 patterned substrates by halide vapour phase epitaxy von NATAF, G, BEAUMONT, B, BOUILLE, A, VENNEGUES, P, HAFFOUZ, S, VAILLE, M, GIBART, P

Volltext

Acoustical and Optical Gallium Nitride Waveguides Grown on Si(111) by Metalorganic Vapor Phase Epitaxy von Schenk, H.P.D., Feltin, E., Vaille, M., Gibart, P., Kunze, R., Schmidt, H., Weihnacht, M., Doghèche, E.

Volltext