Planar, ion-implanted bipolar devices in GaAs von Vaidyanathan, K.V., Jullens, R.A., Anderson, C.L., Dunlap, H.L.

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Characterization of enhanced barrier Schottky diodes: impurity profiling in the punch-through region von CROWELL, C. R, STANCHINA, W. E, VAIDYANATHAN, K. V

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Effects and characterization of ion implantation enhanced GaAs Schottky barriers von STANCHINA, W. E, CLARK, M. D, VAIDYANATHAN, K. V, JULLENS, R. A, CROWELL, C. R

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Electrical profiling and optical activation studies of Be-implanted GaAs von McLevige, W. V., Helix, M. J., Vaidyanathan, K. V., Streetman, B. G.

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Solid phase regrowth of low temperature Be-implanted GaAs von SOOK-II KWUN, LEE, M. H, LIOU, L. L, SPITZER, W. G, DUNLAP, H. L, VAIDYANATHAN, K. V

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Capless Annealing of Ion‐Implanted Gallium Arsenide by a Melt‐Controlled Ambient Technique von Anderson, C. Lawrence, Vaidyanathan, K. V., Dunlap, H. L., Kamath, G. S.

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Properties of Be-implanted planar GaAs p-n junctions von Helix, M.J., Vaidyanathan, K.V., Streetman, B.G.

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Diffusion studies of Be-implanted GaAs by SIMS and electrical profiling von McLevige, W.V., Vaidyanathan, K.V., Streetman, B.G., Comas, J., Plew, L.

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Photoluminescence from Be-implanted GaAs von Chatterjee, Pallab K., Vaidyanathan, K. V., McLevige, W. V., Streetman, B. G.

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Photoluminescence study of native defects in annealed GaAs von Chatterjee, P.K., Vaidyanathan, K.V., Durschlag, M.S., Streetman, B.G.

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Optical studies of Be-implanted GaAs von Kwun, Sook-Il, Spitzer, W. G., Anderson, C. L., Dunlap, H. L., Vaidyanathan, K. V.

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Temperature dependence of photoluminescence from Be-implanted GaAs von Chatterjee, Pallab K., McLevige, W. V., Vaidyanathan, K. V., Streetman, B. G.

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Study of Encapsulants for Annealing GaAs von Vaidyanathan, K. V., Helix, M. J., Wolford, D. J., Streetman, B. G., Blattner, R. J., Evans, C. A.

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R.F. plasma deposition of silicon nitride layers von Helix, M.J., Vaidyanathan, K.V., Streetman, B.G., Dietrich, H.B., Chatterjee, P.K.

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Temperature dependence of electrical properties in Be-implanted semi-insulating GaAs von Hutchby, J A, Vaidyanathan, K V

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Annealing studies of Be-doped GaAs grown by molecular beam epitaxy von McLevige, W. V., Vaidyanathan, K. V., Streetman, B. G., Ilegems, M., Comas, J., Plew, L.

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Resonant injection quantum well diodes and lasers von Schulman, J.N., Smirl, A.L., Vaidyanathan, K.V.

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Annealing studies of Be-implanted GaAs0.6P0.4 von McLevige, W. V., Vaidyanathan, K. V., Streetman, B. G., Comas, J., Plew, L.

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Case Report - Axillary venous thrombosis following hyperabduction of shoulder von K. V. Shanmugha Das, Ajo K. John and S. Vaidyanathan

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Electrical properties and atomic distribution studies in ion implanted InP von Vaidyanathan, K.V., Anderson, C.L., Dunlap, H.L., Holmes, D.E.

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