Inhomogeneous defect activation by rapid thermal processes in silicon von VU THUONG-QUAT, EICHHAMMER, W, SIFFERT, P

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Gettering of gold by rapid thermal processing von HARTITI, B, VU-THUONG QUAT, EICHHAMMER, W, MULLER, J.-C, SIFFERT, P

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Electron diffusion length in rapid thermal processed p-type silicon von Vu, Thuong-Quat, Eichhammer, W., Siffert, P.

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On the origin of rapid thermal process induced recombination centers in silicon von Eichhammer, W., Vu-Thuong-Quat, Siffert, P.

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Temperature parameter in hydrogen passivation of multicrystalline silicon solar cells von Muller, J.C., Quat, Vu Thuong, Siffert, P., Amzil, H., Barhdadi, A., M'Gafad, N.

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Electron diffusion length in rapid thermal processed p-type silicon von QUAT, V. T, EICHHAMMER, W, SIFFERT, P

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Effect of 14 MeV Neutrons on Space-Charge-Limited Current of Electrons in High Purity Silicon von Quat, Vu Thuong, Nicolet, Marc-A.

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Electron Trapping in Neutron-Irradiated Silicon Studied by Space-Charge-Limited Current von Quat, Vu Thuong, Nicolet, Marc-A.

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