Design and Simulation of Near-Terahertz GaN Photoconductive Switches-Operation in the Negative Differential Mobility Regime and Pulse Compression von Rakheja, Shaloo, Li, Kexin, Dowling, Karen M., Conway, Adam M., Voss, Lars F.

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Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors von Ghandiparsi, Soroush, Chatterjee, Bikram, Shen, Jimmy‐Xuan, Gottlieb, Miranda S., Frye, Clint D., Schneider, Joseph D., Muir, Ryan D., Buckley, Brandon W., Harrison, Sara E., Shao, Qinghui, Varley, Joel B., Voss, Lars F.

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Simulating charged defects at database scale von Shen, Jimmy-Xuan, Voss, Lars F., Varley, Joel B.

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Design considerations for three-dimensional betavoltaics von Murphy, John W., Voss, Lars F., Frye, Clint D., Shao, Qinghui, Kazkaz, Kareem, Stoyer, Mark A., Henderson, Roger A., Nikolic, Rebecca J.

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Performance Modeling of Silicon Carbide Photoconductive Switches for High-Power and High-Frequency Applications von Rakheja, S., Huang, L., Hau-Riege, Stefan, Harrison, S. E., Voss, Lars F., Conway, Adam M.

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Photoconductive Switch With High Sub-Bandgap Responsivity in Nitrogen-Doped Diamond von Hall, David L., Voss, Lars F., Grivickas, Paulius, Bora, Mihail, Conway, Adam M., Scajev, Patrik, Grivickas, Vytautas

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Design considerations for gallium arsenide pulse compression photoconductive switch von Dong, Yicong, Dowling, Karen M., Hau-Riege, Stefan P., Conway, Adam, Voss, Lars F., Rakheja, Shaloo

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Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources von Mazumder, Sudip K., Voss, Lars F., Dowling, Karen M., Conway, Adam, Hall, David, Kaplar, Robert J., Pickrell, Gregory W., Flicker, Jack, Binder, Andrew T., Chowdhury, Srabanti, Veliadis, Victor, Luo, Fang, Khalil, Sameh, Aichinger, Thomas, Bahl, Sandeep R., Meneghini, Matteo, Charles, Alain B.

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Photoluminescence and Raman spectroscopy of wide bandgap semiconductors damaged by deep-UV laser irradiation von Huso, Jesse, McCluskey, Matthew D., McCloy, John S., Frye, Clint D., Varley, Joel B., Voss, Lars F.

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A Total Internal Reflection Photoconductive Switch von Bora, Mihail, Voss, Lars F., Grivickas, Paulius V., Hall, David L., Alameda, Jennifer B., Kramer, Noah J., Torres, Andrea M., Conway, Adam M.

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Demonstration of a Three-Dimensionally Structured Betavoltaic von Murphy, John W., Frye, Clint D., Henderson, Roger A., Stoyer, Mark A., Voss, Lars F., Nikolic, Rebecca J.

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Extrinsic Absorption Pathways in Vanadium‐Doped SiC Measured Using a Total Internal Reflection Geometry von Kramer, Noah J., Voss, Lars F., Conway, Adam M., Grivickas, Paulius V., Bora, Mihail, Hall, David L., Caruso, Anthony N.

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p-i-n High-Speed Photodiodes for X-Ray and Infrared Imagers Fabricated by In Situ-Doped APCVD Germanium Homoepitaxy von Hunt, Charles E., Carpenter, Arthur, Voss, Lars F., Scott, Robin C., Shao, Qinghui, Looker, Quinn, Garafalo, Anne, Mistyuk, Sergey, Durand, Cassandra, Kumar, Ankit, Stroud, Jean-Paul, van Benthem, Klaus

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Hall Effect Characterization of α‐Irradiated p‐Type 4H‐SiC von Frye, Clint D., Murphy, John W., Shao, Qinghui, Voss, Lars F., Harrison, Sara E., Edgar, James H., Nikolić, Rebecca J.

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Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System von Shao, Qinghui, Jarrell, Joshua T., Murphy, John M., Frye, Clint D., Henderson, Roger A., Stoyer, Mark A., Voss, Lars F., Nikolic, Rebecca J.

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Smooth Bosch Etch for Improved Si Diodes von Voss, Lars F., Qinghui Shao, Conway, Adam M., Reinhardt, Cathy E., Graff, Robert T., Nikolic, Rebecca J.

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Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma von Frye, Clint D, Donald, Scott B, Reinhardt, Catherine E, Nikolic, Rebecca J, Voss, Lars F, Harrison, Sara E

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Design considerations for gallium arsenide pulse compression photoconductive switch von Dong, Yicong, Dowling, Karen M., Hau-Riege, Stefan P., Conway, Adam, Voss, Lars F., Rakheja, Shaloo

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Impact of carrier wafer on etch rate, selectivity, morphology, and passivation during GaN plasma etching von Frye, Clint D., Donald, Scott B., Reinhardt, Catherine, Voss, Lars F., Harrison, Sara E.

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ICP etching of GaN microstructures in a Cl2–Ar plasma with subnanometer-scale sidewall surface roughness von Frye, Clint D., Reinhardt, Catherine E., Donald, Scott B., Voss, Lars F., Harrison, Sara E.

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