Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation von Murphy, J.D., McGuire, R.E., Bothe, K., Voronkov, V.V., Falster, R.J.

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Grown-in defects in silicon produced by agglomeration of vacancies and self-interstitials von Voronkov, V.V.

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On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing von Falster, R., Voronkov, V.V., Quast, F.

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Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon von Voronkov, V.V., Falster, R.

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Generation and loss of hydrogen-boron pairs in fired silicon wafers von Voronkov, V.V., Falster, R.

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The engineering of intrinsic point defects in silicon wafers and crystals von Falster, R, Voronkov, V.V

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The effect of nitrogen on void formation in Czochralski silicon crystals von Voronkov, V.V., Falster, R.

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The effect of carbon and antimony on grown-in microdefects in Czochralski silicon crystals von Porrini, M., Voronkov, V.V., Falster, R.

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On the equilibrium concentration of boron-oxygen defects in crystalline silicon von Walter, D.C., Falster, R., Voronkov, V.V., Schmidt, J.

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Behavior of volatile dopants (P, Sb) in Czochralski silicon growth von Porrini, M., Scala, R., Voronkov, V.V.

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In-situ characterization of electron-assisted regeneration of Cz-Si solar cells von Helmich, L., Walter, D.C., Bredemeier, D., Falster, R., Voronkov, V.V., Schmidt, J.

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The diffusivity of the vacancy in silicon: Is it fast or slow? von Voronkov, V.V., Falster, R.

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Intrinsic point defects and grown-in microdefects in silicon crystals—comment on: “Intrinsic point defect behaviour in silicon crystals during growth from the melt: A model derived... von Voronkov, V.V., Falster, R.

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Lifetimes exceeding 1ms in 1-Ωcm boron-doped Cz-silicon von Walter, D.C., Lim, B., Bothe, K., Falster, R., Voronkov, V.V., Schmidt, J.

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Vacancy-type microdefect formation in Czochralski silicon von Voronkov, V.V., Falster, R.

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Nucleation and growth of faceted voids in silicon crystals von Voronkov, V.V, Falster, R

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The mechanism of swirl defects formation in silicon von Voronkov, V.V.

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Properties of vacancies and self-interstitials in silicon deduced from crystal growth, wafer processing, self-diffusion and metal diffusion von Voronkov, V.V., Falster, R.

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Correlated out-diffusion of nitrogen and in-diffusion of self-interstitials resulting in elimination of nitrogen-related deep centres von Voronkov, V.V., Falster, R.

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INVESTIGATION OF DIELECTRIC PROPERTIES OF NONIDEAL PLASMA IN THE FRAMEWORK OF PSEUDOPOTENTIAL MODEL von V.V. Voronkov

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