Independent Subsystems of Atomic Hydrogen in Silicon Responsible for Boron Passivation and for Dimer Production von Voronkov, Vladimir V.

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Formation, dissociation, and diffusion of various hydrogen dimers in silicon von Voronkov, Vladimir V., Falster, Robert

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Properties of Hydrogen Species in n‐Type Silicon Deduced from In‐Diffusion Profiles von Voronkov, Vladimir V., Falster, Robert

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Trap‐Limited Vacancy Diffusion in Silicon at High Temperatures von Voronkov, Vladimir V.

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Easy-to-apply methodology to measure the hydrogen concentration in boron-doped crystalline silicon von Walter, Dominic C., Bredemeier, Dennis, Falster, Robert, Voronkov, Vladimir V., Schmidt, Jan

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Impact of hydrogen on the boron-oxygen-related lifetime degradation and regeneration kinetics in crystalline silicon von Helmich, Lailah, Walter, Dominic C., Falster, Robert, Voronkov, Vladimir V., Schmidt, Jan

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On the kinetics of the exchange of hydrogen between hydrogen–boron pairs and hydrogen dimers in crystalline silicon von Walter, Dominic C., Voronkov, Vladimir V., Falster, Robert, Bredemeier, Dennis, Schmidt, Jan

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Fast and Slow Stages of Lifetime Degradation by Boron–Oxygen Centers in Crystalline Silicon von Schmidt, Jan, Bothe, Karsten, Voronkov, Vladimir V., Falster, Robert

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Modelling plasma‐induced hydrogen profiles in boron‐doped and near‐intrinsic silicon von Voronkov, Vladimir V., Falster, Robert

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Two Kinds of Hydrogen Monomers Manifested in Plasma-Exposed Silicon von Voronkov, Vladimir V.

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Minority carrier lifetime in indium doped silicon for photovoltaics von Murphy, John D., Pointon, Alex I., Grant, Nicholas E., Shah, Vishal A., Myronov, Maksym, Voronkov, Vladimir V., Falster, Robert J.

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Morphology of macroporous silicon subjected to sintering in argon von Astrova, Ekaterina V., Preobrazhenskiy, Nikita E., Pavlov, Sergey I., Voronkov, Vladimir B.

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Vacancy Species Produced by Rapid Thermal Annealing of Silicon Wafers von Falster, Robert, Voronkov, Vladimir V.

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Permanent deactivation of boron-oxygen recombination centres in silicon von Voronkov, Vladimir, Falster, Robert

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Vacancy out-diffusion in nitrogen-doped silicon von Voronkov, Vladimir, Falster, Robert

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The nature of boron-oxygen lifetime-degrading centres in silicon von Voronkov, Vladimir, Falster, Robert

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Impact of arsenic and phosphorus concentration on oxygen content in heavily doped silicon single crystal von Scala, Roberto, Porrini, Maria, Voronkov, Vladimir

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Rapid Thermal Processing and the Control of Oxygen Precipitation Behaviour in Silicon Wafers von Falster, Robert J., Voronkov, Vladimir V.

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Permanent deactivation of boron-oxygen recombination centres in silicon: Permanent deactivation of B-O recombination centres in Si von Voronkov, Vladimir, Falster, Robert

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Fast and Slow Vacancies in Silicon von Falster, Robert, Voronkov, Vladimir V.

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