Changes in Inpatient and Day Patient Treatment during the COVID-19 Pandemic: Insights and Outlook Results of a Study in an Adult Psychiatry Clinic in Germany von Barth, T., Voigtländer, B.

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Scanning tunneling potentiometry implemented into a multi-tip setup by software von Lüpke, F, Korte, S, Cherepanov, V, Voigtländer, B

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Etched graphene quantum dots on hexagonal boron nitride von Engels, S., Epping, A., Volk, C., Korte, S., Voigtländer, B., Watanabe, K., Taniguchi, T., Trellenkamp, S., Stampfer, C.

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Si(111) strained layers on Ge(111): Evidence for c ( 2 × 4 ) domains von Zhachuk, R., Coutinho, J., Dolbak, A., Cherepanov, V., Voigtländer, B.

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Scanning tunneling spectroscopy and manipulation of C60 on Cu(111) von Stróżecka, A., Mysliveček, J., Voigtländer, B.

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Direct observation of subcritical fluctuations during the formation of strained semiconductor islands von Jesson, DE, Kastner, M, Voigtlander, B

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Dislocation networks in conventional and surfactant-mediated Ge/Si(1 1 1) epitaxy von Filimonov, S.N., Cherepanov, V., Paul, N., Asaoka, H., Brona, J., Voigtländer, B.

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On the microscopic origin of the kinetic step bunching instability on vicinal Si( [formula omitted]) von Mysliveček, J, Schelling, C, Schäffler, F, Springholz, G, Šmilauer, P, Krug, J, Voigtländer, B

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Influence of surfactants on the growth-kinetics of Si on Si(111) von Voigtländer, B., Zinner, A.

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Formation of Si/Ge nanostructures at surfaces by self-organization von Voigtländer, Bert, Kawamura, Midori, Paul, Neelima, Cherepanov, Vasily

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Molecular beam epitaxy of silicon–germanium nanostructures von Pchelyakov, O.P, Bolkhovityanov, Yu.B, Dvurechenskii, A.V, Nikiforov, A.I, Yakimov, A.I, Voigtländer, B

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Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties von Pchelyakov, O. P., Bolkhovityanov, Yu. B., Dvurechenskii, A. V., Sokolov, L. V., Nikiforov, A. I., Yakimov, A. I., Voigtländer, B.

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Structure of steps on As-passivated Si(111): Ab initio calculations and scanning tunneling microscopy von Antons, A., Berger, R., Schroeder, K., Voigtländer, B.

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“Rotating” steps in Si(0 0 1) homoepitaxy von Filimonov, S.N, Voigtländer, B

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Nucleation and growth of CoSi2 on Si(100) studied by scanning tunneling microscopy von SCHEUCH, V, VOIGTLÄNDER, B, BONZEL, H. P

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Fabrication of Si/Ge nanoring structures by MBE von Voigtländer, B., Kawamura, M., Paul, N., Cherepanov, V.

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Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth von Voigtländer, Bert

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Kinetically Self-Limiting Growth of Ge Islands on Si(001) von Kästner, Martin, Voigtländer, Bert

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On the origin of the kinetic growth instability of homoepitaxy on Si(001) von Mysliveček, J., Schelling, C., Springholz, G., Schäffler, F., Voigtländer, B., Šmilauer, P.

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Influence of strain on binding energies of Si atoms at Ge( [formula omitted]) surfaces von Filimonov, S.N, Voigtländer, B

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