Dependence of magnetic penetration depth on the thickness of superconducting Nb thin films von GUBIN, A. I, IL'IN, K. S, VITUSEVICH, S. A, SIEGEL, M, KLEIN, N

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Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors von Pud, S., Gasparyan, F., Petrychuk, M., Li, J., Offenhäusser, A., Vitusevich, S. A.

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Low-frequency noise in individual carbon nanotube field-effect transistors with top, side and back gate configurations: effect of gamma irradiation von Sydoruk, V A, Goß, K, Meyer, C, Petrychuk, M V, Danilchenko, B A, Weber, P, Stampfer, C, Li, J, Vitusevich, S A

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Advanced performance and scalability of Si nanowire field-effect transistors analyzed using noise spectroscopy and gamma radiation techniques von Li, J, Vitusevich, SA, Petrychuk, M V, Pud, S, Offenhaeusser, A, Danilchenko, BA

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Noise spectroscopy of transport properties in carbon nanotube field-effect transistors von Sydoruk, V.A., Petrychuk, M.V., Ural, A., Bosman, G., Offenhäusser, A., Vitusevich, S.A.

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Improvement of interface properties of AlGaN/GaN heterostructures under gamma-radiation von Vitusevich, S.A., Kurakin, A.M., Konakova, R.V., Belyaev, A.E., Klein, N.

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1/ f noise and mechanisms of the conductivity in carbon nanotube bundles von Danilchenko, B.A., Tripachko, N.A., Lev, S., Petrychuk, M.V., Sydoruk, V.A., Sundqvist, B., Vitusevich, S.A.

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Direct-current-assisted microwave quenching of YBa2Cu3O7−δ coplanar waveguide to a highly dissipative state von Cherpak, N. T., Lavrinovich, A. A., Gubin, A. I., Vitusevich, S. A.

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Electronic edge-state and space-charge phenomena in long GaN nanowires and nanoribbons von Sydoruk, V A, Zadorozhnyi, I, Hardtdegen, H, Lüth, H, Petrychuk, M V, Naumov, A V, Korotyeyev, V V, Kochelap, V A, Belyaev, A E, Vitusevich, S A

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Aluminium nitride–niobium multilayers and free-standing structures for MEMS von Danylyuk, S.V., Ott, R., Panaitov, G., Pickartz, G., Hollmann, E., Vitusevich, S.A., Belyaev, A.E., Klein, N.

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High-field quasi-ballistic transport in AlGaN/GaN heterostructures von Danilchenko, B. A., Tripachko, N. A., Belyaev, A. E., Vitusevich, S. A., Hardtdegen, H., Lüth, H.

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Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures von Kurakin, A. M., Vitusevich, S. A., Danylyuk, S. V., Hardtdegen, H., Klein, N., Bougrioua, Z., Naumov, A. V., Belyaev, A. E.

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Mechanism of contact resistance formation in ohmic contacts with high dislocation density von Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Konakova, R. V., Kudryk, Ya Ya, Novitskii, S. V., Sheremet, V. N., Li, J., Vitusevich, S. A.

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Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels von Vitusevich, S. A., Danylyuk, S. V., Klein, N., Petrychuk, M. V., Avksentyev, A. Yu, Sokolov, V. N., Kochelap, V. A., Belyaev, A. E., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L. F.

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Effects of γ-irradiation on AlGaN/GaN-based HEMTs von Vitusevich, S. A., Klein, N., Belyaev, A. E., Danylyuk, S. V., Petrychuk, M. V., Konakova, R. V., Kurakin, A. M., Rengevich, A. E., Avksentyev, A. Yu, Danilchenko, B. A., Tilak, V., Smart, J., Vertiatchikh, A., Eastman, L. F.

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Features of temperature dependence of contact resistivity in ohmic contacts on lapped n- Si von Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Vinogradov, A. O., Kladko, V. P., Konakova, R. V., Kudryk, Ya. Ya, Kuchuk, A. V., Sheremet, V. N., Vitusevich, S. A.

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Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate von Kladko, V. P., Kolomys, A. F., Slobodian, M. V., Strelchuk, V. V., Raycheva, V. G., Belyaev, A. E., Bukalov, S. S., Hardtdegen, H., Sydoruk, V. A., Klein, N., Vitusevich, S. A.

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Influence of surface passivation on low-frequency noise properties of AlGaN/GaN high electron mobility transistor structures von Vitusevich, S. A., Petrychuk, M. V., Danylyuk, S. V., Kurakin, A. M., Klein, N., Belyaev, A. E.

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Hot carrier energy losses in conducting layers of AlGaN/GaN heterostructures grown on SiC and Al2O3 substrates von Danilchenko, B. A., Zelensky, S. E., Drok, E., Vitusevich, S. A., Danylyuk, S. V., Klein, N., Lüth, H., Belyaev, A. E., Kochelap, V. A.

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Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN heterostructures von Kladko, V. P., Kuchuk, A. V., Safryuk, N. V., Machulin, V. F., Belyaev, A. E., Hardtdegen, H., Vitusevich, S. A.

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