Doping reaction of PH3 and B2H6 with Si(100) von YU, M. L, VITKAVAGE, D. J, MEYERSON, B. S

Volltext

A robust multilevel interconnect module for subquartermicrometer complementary metal oxide semiconductor technology integration von ZHANG, Zhibo, HUANG, J.-S, TU, K.-N, TWIFORD, M, MARTIN, E, LAYADI, N, SALAH, A, BHOWMIK, B, VITKAVAGE, D, LYTLE, S, YEH, E. C. C

Volltext

Ellipsometric and Rutherford backscattering characterization of low-energy hydrogen-, helium-, neon-, and argon-bombarded silicon von BUCKNER, J. L, VITKAVAGE, D. J, IRENE, E. A

Volltext

Gating of germanium surfaces using pseudomorphic silicon interlayers von VITKAVAGE, D. J, FOUNTAIN, G. G, RUDDER, R. A, HATTANGADY, S. V, MARKUNAS, R. J

Volltext

Interface engineering with pseudormorphic interlayers : Ge metal-insulator-semiconductor structures von HATTANGADY, S. V, FOUNTAIN, G. G, RUDDER, R. A, MANTINI, M. J, VITKAVAGE, D. J, MARKUNAS, R. J

Volltext

Optical model for the ellipsometric characterization of low energy ion beam damage in single-crystal silicon von BUCKNER, J. L, VITKAVAGE, D. J, IRENE, E. A, MAYER, T. M

Volltext

Sputtering of chlorinated silicon surfaces studied by secondary ion mass spectrometry and ion scattering spectroscopy von BARISH, E. L, VITKAVAGE, D. J, MAYER, T. M

Volltext

Determination of Electroless Copper Deposition Rate from Polarization Data in the Vicinity of the Mixed Potential von Paunovic, M., Vitkavage, D.

Volltext

In-situ Formation of a Copper Silicide Cap For TDDB and Electromigration Improvement von Chattopadhyay, K., van Schravendijk, B., Mountsier, T.W., Alers, G.B., Hornbeck, M., Wu, H.J., Shaviv, R., Harm, G., Vitkavage, D., Apen, E., Yu, Y., Havemann, R.

Volltext

Inversion of n‐Type GaAs Surfaces Using a Silicon‐Silicon Dioxide Insulator Structure von Hattangady, S. V., Fountain, G. G., Vitkavage, D. J., Rudder, R. A., Markunas, R. J.

Volltext

COM2 SiGe modular BiCMOS technology for digital, mixed-signal, and RF applications von Carroll, M., Ivanov, T., Kuehne, S., Chu, J., King, C., Frei, M., Mastrapasqua, M., Johnson, R., Ng, K., Moinian, S., Martin, S., Huang, C., Hsu, T., Nguyen, D., Singh, R., Fritzinger, L., Esry, T., Moller, W., Kane, B., Abeln, G., Hwang, D., Orphee, D., Lytle, S., Roby, M., Vitkavage, D., Chesire, D., Ashton, R., Shuttleworth, D., Thoma, M., Choi, S., Lewllen, S., Mason, P., Lai, T., Hsieh, H., Dennis, D., Harris, E., Thomas, S., Gregor, R., Sana, P., Wu, W.

Volltext bestellen

Non-Contact Cleaning Process for Post-CMP Copper von Mitchel, Marie, Zhang, Guang Ying, Huang, Frank, Vitkavage, Daniel J., Hansen, David G., Koos, Daniel A., Svirchevski, Julia, Reinhardt, Karen A.

Volltext

Ion channeling studies of low energy ion bombardment induced crystal damage in silicon von Vitkavage, D.J., Dale, C.J., Chu, W.K., Finstad, T.G., Mayer, T.M.

Volltext

Doping reaction of PH sub(3) and B sub(2)H sub(6) with Si(100) von Yu, M L, Vitkavage, D J, Meyerson, B S

Volltext

Inversion of n-type GaAs surface using a silicon-silicon dioxide insulator structure von HATTANGADY, S. V, FOUNTAIN, G. G, VITKAVAGE, D. J, RUDDER, R. A, MARKUNAS, R. J

Volltext

Pitting of the silicon layer of poly buffered LOCOS stack von OBENG, Y. S, BRADY, D. C, VITKAVAGE, S. C, TAYLOR, J. A, HANSON, K. J, SAPJETA, B. J

Volltext

Overcoming Cu/CVD low-k integration challenges in a high performance interconnect technology von Lytle, S.A., Karthikeyan, S., Oladeji, I.O., Lee, T.J., Li, H.M., Zhang, A., Steiner, K.G., Merchant, S.M., Oh, M., Jessen, S.W., Gibson, G.W., Ramappa, D., Taylor, J.A., Tse, T.Y., Hariharaputhiran, M., Hua, G., Kim, H.T., Mattern, L.N., Kamat, N., Chew, P.K.H., Chesire, D.P., Kang, S.H., Vitkavage, S.C., Adebanjo, R.O., Wolf, T.M., Kook, T., Huang, R.Y.S., Cuthbertson, A., Hillenius, S.J., Ibbotson, D.E.

Volltext bestellen

HIGH DENSITY PLASMA FLUORINATED SILICON GLASS PROCESS STACK AND ITS MANUFACTURING METHOD von STEINER KURT G, VITKAVAGE DANIEL J, ROBY MARY D, FUIRI SHAO, LYTLE STEVEN A, VITKAVAGE SUSAN C, THOMA MORGAN J

Volltext bestellen

Use of small openings in large topography features to improve dielectric thickness control and a method of manufacture thereof von Ashton, Robert A, Lytle, Steven A, Roby, Mary D, Thoma, Morgan J, Vitkavage, Daniel J

Volltext bestellen

Use of small openings in large topography features to improve dielectric thickness control and a method of manufacture thereof von VITKAVAGE DANIEL J, ROBY MARY D, ASHTON ROBERT A, LYTLE STEVEN A, THOMA MORGAN J

Volltext bestellen