Tutorial: Crystal orientations and EBSD — Or which way is up? von Britton, T.B., Jiang, J., Guo, Y., Vilalta-Clemente, A., Wallis, D., Hansen, L.N., Winkelmann, A., Wilkinson, A.J.

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Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction von Naresh-Kumar, G., Vilalta-Clemente, A., Jussila, H., Winkelmann, A., Nolze, G., Vespucci, S., Nagarajan, S., Wilkinson, A. J., Trager-Cowan, C.

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Diffraction effects and inelastic electron transport in angle‐resolved microscopic imaging applications von WINKELMANN, A., NOLZE, G., VESPUCCI, S., NARESH‐KUMAR, G., TRAGER‐COWAN, C., VILALTA‐CLEMENTE, A., WILKINSON, A.J., VOS, M.

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Controlling the crystal structure of Ni nanoparticles by the use of alkylamines von Mourdikoudis, S., Simeonidis, K., Vilalta-Clemente, A., Tuna, F., Tsiaoussis, I., Angelakeris, M., Dendrinou-Samara, C., Kalogirou, O.

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On the composition of microtwins in a single crystal nickel-based superalloy von Barba, D., Pedrazzini, S., Vilalta-Clemente, A., Wilkinson, A.J., Moody, M.P., Bagot, P.A.J., Jérusalem, A., Reed, R.C.

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The structure of InAlN/GaN heterostructures for high electron mobility transistors von Vilalta-Clemente, A., Poisson, M. A., Behmenburg, H., Giesen, C., Heuken, M., Ruterana, P.

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Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light–electron microscopy von Naresh-Kumar, G., Edwards, P. R., Batten, T., Nouf-Allehiani, M., Vilalta-Clemente, A., Wilkinson, A. J., Le Boulbar, E., Shields, P. A., Starosta, B., Hourahine, B., Martin, R. W., Trager-Cowan, C.

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Optical properties of InN grown on Si(111) substrate von Sakalauskas, E., Schley, P., Räthel, J., Klar, T. A., Müller, R., Pezoldt, J., Tonisch, K., Grandal, J., Sánchez-García, M. A., Calleja, E., Vilalta-Clemente, A., Ruterana, P., Goldhahn, R.

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Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors von Naresh-Kumar, G., Vilalta-Clemente, A., Pandey, S., Skuridina, D., Behmenburg, H., Gamarra, P., Patriarche, G., Vickridge, I., di Forte-Poisson, M. A., Vogt, P., Kneissl, M., Morales, M., Ruterana, P., Cavallini, A., Cavalcoli, D., Giesen, C., Heuken, M., Trager-Cowan, C.

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Investigation of InN layers grown by molecular beam epitaxy on GaN templates von Vilalta-Clemente, A., Mutta, G. R., Chauvat, M. P., Morales, M., Doualan, J. L., Ruterana, P., Grandal, J., Sánchez-García, M. A., Calle, F., Valcheva, E., Kirilov, K.

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Porous GaN and High‑κ MgO–GaN MOS Diode Layers Grown in a Single Step on Silicon von Bilousov, O. V, Carvajal, J. J, Vilalta-Clemente, A, Ruterana, P, Díaz, F, Aguiló, M, O’Dwyer, C

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Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope von Naresh-Kumar, G., Hourahine, B., Vilalta-Clemente, A., Ruterana, P., Gamarra, P., Lacam, C., Tordjman, M., di Forte-Poisson, M. A., Parbrook, P. J., Day, A. P., England, G., Trager-Cowan, C.

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Electron Channeling Contrast Imaging of Defects in III-Nitride Semiconductors von Trager-Cowan, C., Naresh-Kumar, G., Allehiani, N., Kraeusel, S., Hourahine, B., Vespucci, S., Thomson, D., Bruckbauer, J., Kusch, G., Edwards, P. R., Martin, R. W., Mauder, C., Day, A. P., Winkelmann, A., Vilalta-Clemente, A., Wilkinson, A. J., Parbrook, P. J., Kappers, M. J., Moram, M. A., Oliver, R. A., Humphreys, C. J., Shields, P., Le Boulbar, E. D., Maneuski, D., O'Shea, V., Mingard, K. P.

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Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin fi... von Vilalta-Clemente, A., Naresh-Kumar, G., Nouf-Allehiani, M., Gamarra, P., di Forte-Poisson, M.A., Trager-Cowan, C., Wilkinson, A.J.

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On the composition of microtwins in a single crystal nickel-based superalloy von Barba, D, Pedrazzini, S, Vilalta-Clemente, A, Wilkinson, AJ, Moody, MP, Bagot, PAJ, Jerusalem, A, Reed, RC

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Measurement of probability distributions for internal stresses in dislocated crystals von Wilkinson, AJ, Tarleton, E, Vilalta-Clemente, A, Jiang, J, Britton, TB, Collins, DM

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Mapping Anti-phase Domains by Polarity Sensitive Orientation Imaging Using Electron Backscatter Diffraction von Naresh-Kumar, G., Vespucci, S., Vilalta-Clemente, A., Jussila, H., Winkelmann, A., Nolze, G., Nagarajan, S., Wilkinson, A. J., Trager-Cowan, C.

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Data for: "Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light–electron microscopy" von Gunasekar, Naresh

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Strain Monitoring During Laser Metal Deposition of Inconel 718 by Neutron Diffraction von Cabeza, S., Özcan, B., Cormier, J., Pirling, T., Polenz, S., Marquardt, F., Hansen, T. C., López, E., Vilalta-Clemente, A., Leyens, C.

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Electron channeling contrast imaging of defects in III-nitride semiconductors von Trager-Cowan, C., Naresh-Kumar, G., Allehiani, N., Kraeusel, S., Hourahine, B., Vespucci, S., Thomson, D., Bruckbauer, J., Kusch, G., Edwards, P. R., Martin, R. W., Mauder, C., Day, A. P., Winkelmann, A., Vilalta-Clemente, A., Wilkinson, A. J., Parbrook, P. J., Kappers, M. J., Moram, M. A., Oliver, R. A., Humphreys, C. J., Shields, P., Le Boulbar, E. D., Maneuski, D., O'Shea, V., Mingard, K. P.

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