Contribution of x-ray topography and high-resolution diffraction to the study of defects in SiC von Dudley, Michael, Huang, XianRong, Vetter, William M

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Partial dislocations in the X-ray topography of as-grown hexagonal silicon carbide crystals von Vetter, William M, Dudley, Michael

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Basal plane slip and formation of mixed-tilt boundaries in sublimation-grown hexagonal polytype silicon carbide single crystals von Ha, Seoyong, Skowronski, Marek, Vetter, William M., Dudley, Michael

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Characterization of defects in 3C-silicon carbide crystals von Vetter, William M., Dudley, Michael

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Synthesis, characterization, and reactivity of .alpha.-ketoacyl complexes of platinum(II) and palladium(II). Crystal structures of trans-Pt(PPh3)2(Cl)(COCOPh) and cis-Pt(PPh3)2(COP... von Sen, Ayusman, Chen, Jwu Ting, Vetter, William M, Whittle, Robert R

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Micropipes in Silicon Carbide Crystals: Do all Screw Dislocations have Open Cores? von Vetter, William M., Dudley, Michael

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The perfection and defect structure of organic hourglass inclusion K2SO4 crystals von VETTER, William M, TOTSUKA, Hirono, DUDLEY, Michael, KAHR, Bart

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Outstanding Meeting Paper/Article: High-resolution x-ray topography of dislocations in 4H-SiC epilayers von Kamata, Isaho, Tsuchida, Hidekazu, Vetter, William M, Dudley, Michael

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Behavior of Basal Plane Dislocations and Low Angle Grain Boundary Formation in Hexagonal Silicon Carbide von Chen, Yi, Vetter, William M., Dudley, Michael, Ma, Rong Hui, Dhanaraj, Govindhan

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Chemistry of metal oxo alkyl complexes. Mechanistic studies on the anaerobic and aerobic decompositions of molybdenum(VI) dioxo dialkyl complexes von Vetter, William M, Sen, Ayusman

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A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers von Ha, Seo Young, Vetter, William M., Dudley, Michael, Skowronski, Marek

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Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-Epilayers von Vetter, William M., Dudley, Michael, Tsuchida, Hidekazu, Kamata, Isaho

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The perfection and defect structure of organic hourglass inclusion K 2SO 4 crystals von Vetter, William M., Totsuka, Hirono, Dudley, Michael, Kahr, Bart

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Material defects in 4 H -silicon carbide diodes von Zimmermann, Uwe, Österman, John, Kuylenstierna, Dan, Hallén, Anders, Konstantinov, Andrey O., Vetter, William M., Dudley, Michael

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Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy von Spry, David J., Vetter, William M., Dudley, Michael, Skowronski, Marek, Neudeck, Philip G., Trunek, Andrew J., Huang, X., Powell, J. Anthony, Liu, Jin Qiang

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Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices von Dudley, Michael, Vetter, William M., Neudeck, Philip G., Huang, X.

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Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC Substrates von Vetter, William M., Emorhokpor, Ejiro, Sandhu, R., Weber, Arnd Dietrich, Somanchi, A., Carlson, E.P., Basceri, C., Wan, Jian Wei, Jenny, Jason R., Velidandla, V., Oliver, James D., Orazio, F., Dudley, Michael, Goorsky, M.S., Blew, A., Burkeen, F.

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Homoepitaxial 'Web Growth' of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free Surfaces von Spry, David J., Vetter, William M., Dudley, Michael, Neudeck, Philip G., Trunek, Andrew J., Benavage, Emye, Abel, Phillip B., Powell, J. Anthony, Beheim, Glenn M.

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X-ray Characterization of 3 inch Diameter 4H and 6H-SiC Experimental Wafers von Vetter, William M., Dudley, Michael, Skowronski, Marek, Kuhr, T.A.

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Synchrotron White Beam Topography Studies of 2H SiC Crystals von Dudley, Michael, Vetter, William M., Neudeck, Philip G., Huang, W., Powell, J. Anthony

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