Self-Aligned Process for Selectively Etched p-GaN-Gated AlGaN/GaN-on-Si HFETs von Lukens, Gerrit, Hahn, Herwig, Kalisch, Holger, Vescan, Andrei

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Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth von Kotzea, Simon, Debald, Arne, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

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Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon von Yacoub, Hady, Zweipfennig, Thorsten, Lukens, Gerrit, Behmenburg, Hannes, Fahle, Dirk, Eickelkamp, Martin, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

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Button shear testing for adhesion measurements of 2D materials von Schätz, Josef, Nayi, Navin, Weber, Jonas, Metzke, Christoph, Lukas, Sebastian, Walter, Jürgen, Schaffus, Tim, Streb, Fabian, Reato, Eros, Piacentini, Agata, Grundmann, Annika, Kalisch, Holger, Heuken, Michael, Vescan, Andrei, Pindl, Stephan, Lemme, Max C.

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Atomically resolved electronic properties in single layer graphene on α-Al2O3 (0001) by chemical vapor deposition von Wördenweber, Henrik, Karthäuser, Silvia, Grundmann, Annika, Wang, Zhaodong, Aussen, Stephan, Kalisch, Holger, Vescan, Andrei, Heuken, Michael, Waser, Rainer, Hoffmann-Eifert, Susanne

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Flexible Large‐Area Light‐Emitting Devices Based on WS2 Monolayers von Andrzejewski, Dominik, Oliver, Ruth, Beckmann, Yannick, Grundmann, Annika, Heuken, Michael, Kalisch, Holger, Vescan, Andrei, Kümmell, Tilmar, Bacher, Gerd

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AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency von Palacios, Paula, Wei, Muh‐Dey, Zweipfennig, Thorsten, Hamed, Ahmed, Beckmann, Carsten, Kalisch, Holger, Vescan, Andrei, Negra, Renato

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Development of a III-nitride electro-optical modulator for UV-vis von Wieben, Jens, Beckmann, Carsten, Yacoub, Hady, Vescan, Andrei, Kalisch, Holger

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Depletion-and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates von Beckmann, Carsten, Yang, Zineng, Wieben, Jens, Zweipfennig, Thorsten, Ehrler, Jasmin, Kirchbrucher, Arno, Kalisch, Holger, Vescan, Andrei

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Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transis... von Hahn, Herwig, Reuters, Benjamin, Geipel, Sascha, Schauerte, Meike, Benkhelifa, Fouad, Ambacher, Oliver, Kalisch, Holger, Vescan, Andrei

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Optimization of Layer Transfer and Photolithography for Device Integration of 2D-TMDC von Ghiami, Amir, Sun, Tianyishan, Fiadziushkin, Hleb, Tang, Songyao, Grundmann, Annika, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

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CVD graphene-MoS2 Van der Waals heterostructures on the millimeter-scale von Rademacher, Nico, Reato, Eros, Völkel, Lukas, Grundmann, Annika, Heuken, Michael, Kalisch, Holger, Vescan, Andrei, Daus, Alwin, Lemme, Max C.

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Impact of Carbon Impurities on Air Stability of MOCVD 2D-MoS2 von Ghiami, Amir, Grundmann, Annika, Tang, Songyao, Fiadziushkin, Hleb, Wang, Zhaodong, Aussen, Stephan, Hoffmann-Eifert, Susanne, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

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Characterization of GaN-based p-channel device structures at elevated temperatures von Hahn, Herwig, Reuters, Benjamin, Pooth, Alexander, Kalisch, Holger, Vescan, Andrei

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Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT von Lecourt, Francois, Agboton, Alain, Ketteniss, Nico, Behmenburg, Hannes, Defrance, Nicolas, Hoel, Virginie, Kalisch, Holger, Vescan, Andrei, Heuken, Michael, De Jaeger, Jean-Claude

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Investigation of Lateral and Vertical Heterostructures of MoS2/WS2 von Belz, Jürgen, Maßmeyer, Oliver, Dogahe, Samane Ojaghi, Beyer, Andreas, Myja, Henrik, Kümmell, Tillmar, Gerd, Bacher, Heuken, Michael, Grundmann, Annika, Kalisch, Holger, Vescan, Andrei, Volz, Kerstin

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The controlled growth of GaN microrods on Si(111) substrates by MOCVD von Foltynski, Bartosz, Garro, Nuria, Vallo, Martin, Finken, Matthias, Giesen, Christoph, Kalisch, Holger, Vescan, Andrei, Cantarero, Andrés, Heuken, Michael

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Investigations of the electrochemical stability of InGaN photoanodes in different electrolytes von Finken, Matthias, Wille, Ada, Reuters, Benjamin, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

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First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET von Hahn, Herwig, Reuters, Ben, Wille, Ada, Ketteniss, Nico, Benkhelifa, Fouad, Ambacher, Oliver, Kalisch, Holger, Vescan, Andrei

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Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers von Hahn, Herwig, Pécz, Béla, Kovács, András, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

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