The physics of SiO2 layers von Verwey, J F, Amerasekera, E A, Bisschop, J

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The mobility of Na+, Li+, and K+ ions in thermally grown SiO2 films von GREEUW, G, VERWEY, J. F

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Instability mechanism in hydrogenated amorphous silicon thin-film transistors von SCHROPP, R. E. I, VERWEY, J. F

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A self-consistent analysis of temperature-dependent field-effect measurements in hydrogenated amorphous silicon thin-film transistors von SCHROPP, R. E. I, SNIJDER, J, VERWEY, J. F

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A model for the electrical conduction in polysilicon oxide von Bisschop, J., Korma, E.J., Botta, E.F.F., Verwey, J.F.

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Donor generation in monocrystalline silicon by halogen implantation von Greeuw, G., Verwey, J.F.

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Fast determination of the effective channel length and the gate Oxide thickness in polycrystalline Silicon MOSFET's von Korma, E.J., Visser, K., Snijder, J., Verwey, J.F.

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Effects of fluorine implantation on the kinetics of dry oxidation of silicon von KUPER, F. G, DE HOSSON, J. T. M, VERWEY, J. F

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Enhanced electron-beam-induced current contrast of grain boundaries in silicon-on-insulator films von KUPER, F. G, DE HOSSON, J. T. M, VERWEY, J. F

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Influence of anneal temperature on the mobile ion concentration in MOS structures von Greeuw, G., Bakker, S., Verwey, J.F.

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Density of oxidation-induced stacking faults in damaged silicon von KUPER, F. G, DE HOSSON, J. T. M, VERWEY, J. F

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The photofield effect in a-Si: H thin film MOS transistors Theory and measurement von Harm, A. O., Schropp, R. E. I., Verwey, J. F.

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An empirical model for early resistance changes due to electromigration von Niehof, J, De Graaff, H.C, Mouthaan, A.J, Verwey, J.F

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Mean free path of hot electrons at the surface of boron-doped silicon von Verwey, J. F., Kramer, R. P., de Maagt, B. J.

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Avalanche-injected electron currents in SiO2 at high injection densities von Verwey, J.F., de Maagt, B.J.

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A refined theoretical analysis of photofield-effect measurements in a-Si : H thin-film transistors von Schropp, R. E. I., Harm, A. O., Verwey, J. F.

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Nonavalanche injection of hot carriers into SiO2 von Verwey, J. F.

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Drift of the breakdown voltage in highly doped planar junctions von Verwey, J.F., Aalberts, J.H., de Maagt, B.J.

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Hole Currents in Thermally Grown SiO2 von Verwey, J. F.

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The illumination flux dependence of the photofield-effect current in amorphous silicon von Schropp, R.E.I., Franke, T., Verwey, J.F.

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