Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1) von Davydov, V.Yu, Klochikhin, A.A., Emtsev, V.V., Ivanov, S.V., Vekshin, V.V., Bechstedt, F., Furthmüller, J., Harima, H., Mudryi, A.V., Hashimoto, A., Yamamoto, A., Aderhold, J., Graul, J., Haller, E.E.

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PHOSPHATE COATING MANUFACTURE METHOD von VEKSHIN V.V, GAJNUTDINOVA A.JA, CHUMAEVSKIJ V.A, KOZYRENKO N.N, VARENTSOVA N.V, BONOKINA M.N, ZAGIDULLINA G.I, IBRAGIMOV R.R, NURIEVA N.N

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Disruption of flavin homeostasis in isolated rat liver mitochondria von Frolova, M.S., Marchenkov, V.V., Vekshin, N.L.

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Band Gap of Hexagonal InN and InGaN Alloys von Davydov, V.Yu, Klochikhin, A.A., Emtsev, V.V., Kurdyukov, D.A., Ivanov, S.V., Vekshin, V.A., Bechstedt, F., Furthmüller, J., Aderhold, J., Graul, J., Mudryi, A.V., Harima, H., Hashimoto, A., Yamamoto, A., Haller, E.E.

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Physical properties of InN with the band gap energy of 1.1 eV von Inushima, T, Mamutin, V.V, Vekshin, V.A, Ivanov, S.V, Sakon, T, Motokawa, M, Ohoya, S

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Radiation-induced defects in n-type GaN and InN von Emtsev, V.V., Davydov, V.Yu, Haller, E.E., Klochikhin, A.A., Kozlovskii, V.V., Oganesyan, G.A., Poloskin, D.S., Shmidt, N.M., Vekshin, V.A., Usikov, A.S.

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Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties von Mamutin, V.V., Shubina, T.V., Vekshin, V.A., Ratnikov, V.V., Toropov, A.A., Ivanov, S.V., Karlsteen, M., Södervall, U., Willander, M.

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Nanometric-Scale Fluctuations of Intrinsic Electric Fields in GaN/AlGaN Quantum Wells with Inversion Domains von Shubina, T.V., Jmerik, V.N., Tkachman, M.G., Vekshin, V.A., Ratnikov, V.V., Toropov, A.A., Sitnikova, A.A., Ivanov, S.V., Bergman, J.P., Karlsson, F., Holtz, P., Monemar, B.

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Optical Properties of an AlInN Interface Layer Spontaneously Formed in Hexagonal InN/Sapphire Heterostructures von Shubina, T.V., Mamutin, V.V., Vekshin, V.A., Ratnikov, V.V., Toropov, A.A., Sitnikova, A.A., Ivanov, S.V., Karlsteen, M., Södervall, U., Willander, M., Pozina, G., Bergman, J.P., Monemar, B.

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Coaxial rf-magnetron nitrogen activator for GaN MBE growth von Jmerik, V.N., Mamutin, V.V., Vekshin, V.A., Shubina, T.V., Ivanov, S.V., Kop’ev, P.S.

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Optical and Structural Characterization of Ga(In)N Three-Dimensional Nanostructures Grown by Plasma-Assisted Molecular Beam Epitaxy von Pozina, G., Bergman, J.P., Monemar, B., Mamutin, V.V., Shubina, T.V., Vekshin, V.A., Toropov, A.A., Ivanov, S.V., Karlsteen, M., Willander, M.

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Optical Control of Group-III and N Flux Intensities in Plasma-Assisted MBE with RF Capacitively-Coupled Magnetron Nitrogen Activator von Jmerik, V.N., Vekshin, V.A., Davydov, V.Yu, Ratnikov, V.V., Tkachman, M.G., Shubina, T.V., Ivanov, S.V.

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