Political Participation of the Youth of St. Petersburg on the Example of Protest Activity von Vekshin, V. O.

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Relevance of Extra-Institutional Modes of Politicisation Young People von Vekshin, V. O.

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A Wideband Receiving System for a New-Generation Radio Interferometer von Vekshin, Yu. V., Zotov, M. B., Lavrov, A. S., Pozdnyakov, I. A., Khvostov, E. Yu, Chernov, V. K.

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Mie resonances, infrared emission, and the band gap of InN von Shubina, T V, Ivanov, S V, Jmerik, V N, Solnyshkov, D D, Vekshin, V A, Kop'ev, P S, Vasson, A, Leymarie, J, Kavokin, A, Amano, H, Shimono, K, Kasic, A, Monemar, B

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The State and Moods of Civil Society on the Example of a Sociological Study of Public Organizations von Vekshin, V. O., Voynov, D. I.

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Experimental and theoretical studies of phonons in hexagonal InN von Davydov, V. Yu, Emtsev, V. V., Goncharuk, I. N., Smirnov, A. N., Petrikov, V. D., Mamutin, V. V., Vekshin, V. A., Ivanov, S. V., Smirnov, M. B., Inushima, T.

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Measurements of Noise Temperatures of Radio Telescope Receiver System of a Two-Element Radio Interferometer with Very Long Baseline von Arsaev, I. E., Vekshin, Yu. V., Lapshin, A. I., Mardyshkin, V. V., Sargsyan, M. V., Khvostov, E. Yu, Chernov, V. K., Yurchuk, E. F.

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Automatic Detection of Sound Repetitions in Verse: Realising the Syllabocentric Approach in the Phonotext Program von Vekshin, Georgy V., Gertzev, Mickhail N., Loskot, Yaroslav E.

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Plasma-assisted MBE growth and characterization of InN on sapphire von Ivanov, S.V, Shubina, T.V, Jmerik, V.N, Vekshin, V.A, Kop’ev, P.S, Monemar, B

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Band Gap of Hexagonal InN and InGaN Alloys von Davydov, V.Yu, Klochikhin, A.A., Emtsev, V.V., Kurdyukov, D.A., Ivanov, S.V., Vekshin, V.A., Bechstedt, F., Furthmüller, J., Aderhold, J., Graul, J., Mudryi, A.V., Harima, H., Hashimoto, A., Yamamoto, A., Haller, E.E.

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Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys von Davydov, V. Yu, Klochikhin, A. A., Emtsev, V. V., Smirnov, A. N., Goncharuk, I. N., Sakharov, A. V., Kurdyukov, D. A., Baidakova, M. V., Vekshin, V. A., Ivanov, S. V., Aderhold, J., Graul, J., Hashimoto, A., Yamamoto, A.

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Physical properties of InN with the band gap energy of 1.1 eV von Inushima, T, Mamutin, V.V, Vekshin, V.A, Ivanov, S.V, Sakon, T, Motokawa, M, Ohoya, S

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Homonymy and repetition (Towards systematics of systemic categories in language and speech) von G V Vekshin

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Optical properties of GaN/AlGaN quantum wells with inversion domains von Shubina, T. V., Jmerik, V. N., Tkachman, M. G., Vekshin, V. A., Toropov, A. A., Ivanov, S. V., Kop'ev, P. S., Bergman, J. P., Karlsson, F., Holtz, P., Monemar, B.

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Growth of optically-active InN with AlInN buffer by plasma-assisted molecular beam epitaxy von Jmerik, V. N., Vekshin, V. A., Shubina, T. V., Ratnikov, V. V., Ivanov, S. V., Monemar, B.

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Radiation-induced defects in n-type GaN and InN von Emtsev, V.V., Davydov, V.Yu, Haller, E.E., Klochikhin, A.A., Kozlovskii, V.V., Oganesyan, G.A., Poloskin, D.S., Shmidt, N.M., Vekshin, V.A., Usikov, A.S.

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MBE Growth of Hexagonal InN Films on Sapphire with Different Initial Growth Stages von Mamutin, V. V., Vekshin, V. A., Davydov, V. Yu, Ratnikov, V. V., Shubina, T. V., Ivanov, S. V., Kopev, P. S., Karlsteen, M., Söderwall, U., Willander, M.

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Intrinsic electric fields in N-polarity GaN/AlxGa1-xN quantum wells with inversion domains von Bigenwald, Pierre, Monemar, B, Shubina, T. V., Toropov, A. A., Jmerik, V. N., Tkachman, M. G., Lebedev, A. V., Ratnikov, V. V., Sitnikova, A. A., Vekshin, V. A., Ivanov, S. V., Kop’ev, P. S., Bergman, J. P., Holtz, P. O.

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Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties von Mamutin, V.V., Shubina, T.V., Vekshin, V.A., Ratnikov, V.V., Toropov, A.A., Ivanov, S.V., Karlsteen, M., Södervall, U., Willander, M.

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Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1) von Davydov, V.Yu, Klochikhin, A.A., Emtsev, V.V., Ivanov, S.V., Vekshin, V.V., Bechstedt, F., Furthmüller, J., Harima, H., Mudryi, A.V., Hashimoto, A., Yamamoto, A., Aderhold, J., Graul, J., Haller, E.E.

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