Track structure in dielectric and semiconductor single crystals irradiated by heavy ions with high level of inelastic energy losses von Didyk, A.Yu, Varichenko, V.S.

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The influence of high energy krypton ion irradiation on optical and electronic properties of diamond von Melnikov, A, Rusetsky, M, Varichenko, V, Skuratov, V, Zaitsev, A, Fahrner, W.R, Partyka, J, Węgierek, P

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Properties of diffused diamond films with n-type conductivity von Popovici, Galina, Prelas, M.A., Sung, T., Khasawinah, S., Melnikov, A.A., Varichenko, V.S., Zaitsev, A.M., Denisenko, A.V., Fahrner, W.R.

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Diamond ultraviolet photovoltaic cell obtained by lithium and boron doping von Popovici, G., Melnikov, A., Varichenko, V. V., Sung, T., Prelas, M. A., Wilson, R. G., Loyalka, S. K.

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Electrical and optical properties of light-emitting p–i–n diodes on diamond von Melnikov, A. A., Denisenko, A. V., Zaitsev, A. M., Shulenkov, A., Varichenko, V. S., Filipp, A. R., Dravin, V. A., Kanda, H., Fahrner, W. R.

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Diamond based light emitting structures von Burchard, B., Zaitsev, A.M., Fahrner, W.R., Melnikov, A.A., Denisenko, A.V., Varichenko, V.S.

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Macrodefect formation in semiconductors during high energy ion implantation: Monte Carlo simulation of damage depth distributions von Fedotov, S.A., Varichenko, V.S., Zaitsev, A.M., Ishimaru, M., Hiroyama, Y., Motooka, T.

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Defect production in silicon irradiated with 5.68 GeV Xe ions von Varichenko, V.S., Zaitsev, A.M., Kazutchits, N.M., Chelyadinskii, A.R., Penina, N.M., Martinovich, V.A., Latushko, Ya.I., Fahrner, W.R.

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Spatial distribution, build-up, and annealing of radiation defects in silicon implanted by high-energy krypton and xenon ions von Chelyadinskii, A. R., Varichenko, V. S., Zaitsev, A. M.

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Radiation damage in dielectric and semiconductor single crystals (direct observation) von Adawi, M.A., Didyk, A.Yu, Varichenko, V.S., Zaitsev, A.M.

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Modification of diamond films by high-energy ion irradiation: “track channelling” and ion charge fluctuation effects von Fedotov, S.A, Byeli, A.V, Zaitsev, A.M, Varichenko, V.S, Kazyutchits, N.M

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The Origin of Dominating ESR Absorption in Ion Implanted Diamond von Ertchak, D. P., Efimov, V. G., Stelmakh, V. F., Martinovich, V. A., Alexandrov, A. F., Guseva, M. B., Penina, N. M., Varichenko, V. S., Karpovich, I. A., Zaitsev, A. M., Fahrner, W. R., Fink, D.

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Characteristics of microwave photoconductivity of natural diamond in the spectral range 200–250 nm von Zakharov, A. G., Poklonskii, N. A., Varichenko, V. S., Gontar’, A. G.

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The microwave photoconductivity of electrons flying over natural diamond von Zakharov, A. G., Poklonskii, N. A., Varichenko, V. S.

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Defect production in silicon implanted with 13.6 MeV boron ions von Varichenko, V.S., Zaitsev, A.M., Melnikov, A.A., Fahrner, W.R., Kasytchits, N.M., Penina, N.M., Erchak, D.P.

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Ion track doping von Fink, D., Chadderton, L. T., Cruz, S. A., Fahrner, W. R., Hnatowicz, V., Te Kaat, E. H., Melnikov, A. A., Varichenko, V. S., Zaitsev, A. M.

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Peculiarities of damage in diamond irradiated by high energy ions von Erchak, D.P., Efimov, V.G., Zaitsev, A.M., Stelmakh, V.F., Penina, N.M., Varichenko, V.S., Tolstykh, V.P.

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EPR, XRD and optical reflectivity studies of radiation damage in silicon after high energy implantation of Ni ions von Varichenko, V.S., Zaitsev, A.M., Lindner, J.K.N., Domres, R., Penina, N.M., Erchak, D.P., Chelyadinskii, A.R., Martinovitsh, V.A.

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p-Type semiconducting structures in diamond implanted with boron ions von Denisenko, A.V., Melnikov, A.A., Zaitsev, A.M., Kurganskii, V.I., Shilov, A.J., Gorban, Ju.P., Varichenko, V.S.

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Penetration of high energy ions in semiconductors through tracks: simulation with transport equations von Zaitsev, A.M., Fedotov, S.A., Melnikov, A.A., Komarov, F.F., Fahrner, W.R., Varichenko, V.S., te Kaat, E.H.

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