Characterization of ageing failures on power MOSFET devices by electron and ion microscopies von Martineau, D., Mazeaud, T., Legros, M., Dupuy, Ph, Levade, C., Vanderschaeve, G.

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Characterization and modelling of ageing failures on power MOSFET devices von Khong, B., Legros, M., Tounsi, P., Dupuy, Ph, Chauffleur, X., Levade, C., Vanderschaeve, G., Scheid, E.

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TEM in situ study of degradation mechanisms induced by temperature annealing and electron beam irradiation in a ZnSe/GaAs heterostructure von Lavagne, S., Levade, C., Vanderschaeve, G.

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Dislocation mobility and electronic effects in semiconductor compounds von Vanderschaeve, G., Levade, C., Caillard, D.

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Sources of misfit dislocations in ZnSe/GaAs (001) heterostructures von Lavagne, S., Levade, C., Vanderschaeve, G.

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misfit dislocations in ZnSe/GaAs(001) heterostructure von LAVAGNE, S, LEVADE, C, VANDERSCHAEVE, G

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Transmission electron microscopy in situ investigation of dislocation mobility in semiconductors von Vanderschaeve, G, Levade, C, Caillard, D

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Modelling of plastic behaviour of compound semiconductors; from simple glide to multiglide von Lohonka, R, Vanderschaeve, G, Kratochvíl, J

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Transmission electron microscopy study of dislocations and extended defects in as-grown icosahedral Al-Pd-Mn single grains von Caillard, D., Vanderschaeve, G., Bresson, L., Gratias, D.

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On the equilibrium configurations of climb-dissociated Lomer-Cottrell dislocations von Bonneville, J., Vanderschaeve, G.V

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Transmission electron microscopy study of crystal defects in ZnSe/GaAs(001) epilayers von Lavagne, S, Levade, C, Vanderschaeve, G, Crestou, J, Tournié, E, Faurie, J P

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Vickers indentation on the {001} faces of ZnS sphalerite under UV illumination and in darkness. Crack patterns and rosette microstructure von Koubaïti, S., Couderc, J.J., Levade, C., Vanderschaeve, G.

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An analysis of elementary dislocations in icosahedral Al-Pd-Mn by Large Angle Convergent-Beam Electron Diffraction (LACBED) von Caillard, D., Morniroli, J.-P., Vanderschaeve, G., Bresson, L., Gratias, D.

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Determination of the fault energies in L12 alloys von Vanderschaeve, G.

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310 misfit dislocations in ZnSe/GaAs(001) heterostructure von Lavagne, S, Levade, C, Vanderschaeve, G

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Cross-slip of partial dislocations via the stair rod mode. The zigzag propagation of deformation microtwins in ordering alloys von Vanderschaeve, G.

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On the influence of indium addition on the mechanical properties of gallium arsenide at room temperature von Koubaïti, S., Levade, C., Couderc, J. J., Vanderschaeve, G.

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Electron-irradiation enhanced dislocation glide in II–VI semiconductors von Levade, Colette, Vanderschaeve, Guy

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Slip and twinning in high-stress-deformed GaAs and the influence of doping von Androussi, Y., Vanderschaeve, G., Lefebvre, A.

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Indentation Test on GaAs: Modelling of the Plastic Zone von Lohonka, R., Vanderschaeve, G., Kratochvíl, J.

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