Consequences of anion vacancy nearest-neighbor hopping in III-V compound semiconductors: drift in InP metal-insulator-semiconductor field effect transistors von VAN VECHTEN, J. A, WAGER, J. F

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On the origins of oxidation-induced stacking faults in silicon von MONSON, T. K, VAN VECHTEN, J. A

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Research, Ownership, Misconduct—Readers Respond von Van Vechten, J. A.

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Mossbauer spectra and the DX-centre complex in AlGaAs von Vechten, J A Van

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Intermixing of an AlAs-GaAs superlattice by Zn diffusion von Van Vechten, J. A.

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Electronic Dilation of Si during Pulsed Laser Annealing von Vechten, J. A. Van

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Surface treatment effects on atomic diffusion in Si explained without self interstitials von VAN VECHTEN, J. A, SCHMID, U, ZHANG Q.-S

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The temperature dependence of band offsets for semiconductor heterojunctions in general and for the particular cases of AlAs-GaAs and HgTe-CdTe von Vechten, J A Van, Malloy, K J

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Atomic model for the EL2 defect in GaAs von WAGER, J. F, VAN VECHTEN, J. A

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Temperature dependence of the mercury telluride-cadmium telluride band offset von MALLOY, K. J, VAN VECHTEN, J. A

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Divacancy binding enthalpy and contribution of divacancies to self-diffusion in Si von VAN VECHTEN, J. A

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Kink site saturation mechanism for whisker growth under sputtering conditions von Van Vechten, J.A., Solberg, W., Batson, P.E., Cuomo, J.J., Rossnagel, S.M.

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Nondestructive depth profiling of carrier lifetimes in full silicon wafers von GUIDOTTI, D, BATCHELDER, J. S, VAN VECHTEN, J. A, FINKEL, A

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Asymmetry of anion and cation vacancy migration enthalpies in III-V compound semiconductors: role of the kinetic energy von VAN VECHTEN, J. A, WAGER, J. F

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Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual‐Enthalpies of Isolated Antisite Defects in Zinc‐Blende and Wurtzite Type Semiconductors von Van Vechten, J. A.

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Simple Theoretical Estimates of the Schottky Constants and Virtual‐Enthalpies of Single Vacancy Formation in Zinc‐Blende and Wurtzite Type Semiconductors von Van Vechten, J. A.

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Atomic model for the M center in InP von WAGNER, J. F, VAN VECHTEN, J. A

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A simple man's view of the passivation of semiconductors von Van Vechten, J.A.

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Evidence for Ostwald ripening of vacancy clusters in float zone silicon obtained from preannealing dependence of gold diffusion behavior von MONSON, T. K, VAN VECHTEN, J. A, ZHANG, Q. S

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Atomic model for the EL0 defect in GaAs von WAGER, J. F, VAN VECHTEN, J. A

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