Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors von Wu, Tian-Li, Marcon, Denis, Bakeroot, Benoit, De Jaeger, Brice, Lin, H. C., Franco, Jacopo, Stoffels, Steve, Van Hove, Marleen, Roelofs, Robin, Groeseneken, Guido, Decoutere, Stefaan

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Impact of crystal orientation on ohmic contact resistance of enhancement-mode p-GaN gate high electron mobility transistors on 200 mm silicon substrates von Van Hove, Marleen, Posthuma, Niels, Geens, Karen, Wellekens, Dirk, Li, Xiangdong, Decoutere, Stefaan

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Power electronics with wide bandgap materials: Toward greener, more efficient technologies von Iacopi, Francesca, Van Hove, Marleen, Charles, Matthew, Endo, Kazuhiro

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Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs von Meneghini, Matteo, Rossetto, Isabella, Bisi, Davide, Ruzzarin, Maria, Van Hove, Marleen, Stoffels, Steve, Tian-Li Wu, Marcon, Denis, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

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Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs von Borga, Matteo, Meneghini, Matteo, Rossetto, Isabella, Stoffels, Steve, Posthuma, Niels, Van Hove, Marleen, Marcon, Denis, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

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Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate von Jie Hu, Stoffels, Steve, Lenci, Silvia, Bakeroot, Benoit, De Jaeger, Brice, Van Hove, Marleen, Ronchi, Nicolo, Venegas, Rafael, Hu Liang, Ming Zhao, Groeseneken, Guido, Decoutere, Stefaan

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CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon von Van Hove, M., Boulay, S., Bahl, S. R., Stoffels, S., Xuanwu Kang, Wellekens, D., Geens, K., Delabie, A., Decoutere, S.

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Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs von Bisi, Davide, Meneghini, Matteo, Marino, Fabio Alessio, Marcon, Denis, Stoffels, Steve, Van Hove, Marleen, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

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Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates von Li, Xiangdong, Van Hove, Marleen, Zhao, Ming, Bakeroot, Benoit, You, Shuzhen, Groeseneken, Guido, Decoutere, Stefaan

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Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration von Li, Xiangdong, Van Hove, Marleen, Zhao, Ming, Geens, Karen, Guo, Weiming, You, Shuzhen, Stoffels, Steve, Lempinen, Vesa-Pekka, Sormunen, Jaakko, Groeseneken, Guido, Decoutere, Stefaan

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Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress von Ruzzarin, Maria, Meneghini, Matteo, Rossetto, Isabella, Van Hove, Marleen, Stoffels, Steve, Tian-Li Wu, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

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Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates von Firrincieli, Andrea, De Jaeger, Brice, You, Shuzhen, Wellekens, Dirk, Van Hove, Marleen, Decoutere, Stefaan

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Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate von Bisi, Davide, Meneghini, Matteo, Van Hove, Marleen, Marcon, Denis, Stoffels, Steve, Wu, Tian-Li, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

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AlN/AlGaN/GaN buffer optimization on silicon (111): bow and crystal quality control for Si-CMOS fabs von Kandaswamy, Prem Kumar, Liang, Hu, Zhao, Ming, Yoga, Saripalli, Carlson, Eric Porter, Thapa, Sarad Bahadur, Hove, Marleen Van, Richard, Olivier, DeVos, Brecht, Vancoille, Eric, Dutta, Barun

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AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility von Cheng, Kai, Liang, Hu, Hove, Marleen Van, Geens, Karen, Jaeger, Brice De, Srivastava, Puneet, Kang, Xuanwu, Favia, Paola, Bender, Hugo, Decoutere, Stefaan, Dekoster, Johan, Borniquel, Jose Ignacio del Agua, Jun, Sung Won, Chung, Hua

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Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface von Visalli, Domenica, Hove, Marleen Van, Leys, Maarten, Derluyn, Joff, Simoen, Eddy, Srivastava, Puneet, Geens, Karen, Degroote, Stefan, Germain, Marianne, Nguyen, Anh Phuc Duc, Stesmans, André, Borghs, Gustaaf

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A 96% Efficient High-Frequency DC-DC Converter Using E-Mode GaN DHFETs on Si von Das, J., Everts, J., Van Den Keybus, J., Van Hove, M., Visalli, D., Srivastava, P., Marcon, D., Kai Cheng, Leys, M., Decoutere, S., Driesen, J., Borghs, G.

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AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance von Visalli, Domenica, Hove, Marleen Van, Derluyn, Joff, Degroote, Stefan, Leys, Maarten, Cheng, Kai, Germain, Marianne, Borghs, Gustaaf

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Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal von Visalli, Domenica, Van Hove, Marleen, Srivastava, Puneet, Derluyn, Joff, Das, Johan, Leys, Maarten, Degroote, Stefan, Cheng, Kai, Germain, Marianne, Borghs, Gustaaf

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Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs von Tian-Li Wu, Franco, Jacopo, Marcon, Denis, De Jaeger, Brice, Bakeroot, Benoit, Stoffels, Steve, Van Hove, Marleen, Groeseneken, Guido, Decoutere, Stefaan

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