HIGH-RESPONSIVITY PHOTOCONDUCTIVE ULTRAVIOLET SENSORS BASED ON INSULATING SINGLE-CRYSTAL GAN EPILAYERS von KHAN, MA, KUZNIA, JN, OLSON, DT, VANHOVE, JM, BLASINGAME, M, REITZ, LF

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Electrical effects of plasma damage in p-GaN von Cao, X. A., Pearton, S. J., Zhang, A. P., Dang, G. T., Ren, F., Shul, R. J., Zhang, L., Hickman, R., Van Hove, J. M.

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Depth and thermal stability of dry etch damage in GaN Schottky diodes von Cao, X. A., Cho, H., Pearton, S. J., Dang, G. T., Zhang, A. P., Ren, F., Shul, R. J., Zhang, L., Hickman, R., Van Hove, J. M.

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Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy von Li, L. K., Jurkovic, M. J., Wang, W. I., Van Hove, J. M., Chow, P. P.

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Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition von ASIF KHAN, M, KUZNIA, J. N, VAN HOVE, J. M, OLSON, D. T, KRISHNANKUTTY, S, KOLBAS, R. M

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Effects of interfacial oxides on Schottky barrier contacts to n - and p -type GaN von Cao, X. A., Pearton, S. J., Dang, G., Zhang, A. P., Ren, F., Van Hove, J. M.

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ATOMIC LAYER EPITAXY OF GAN OVER SAPPHIRE USING SWITCHED METALORGANIC CHEMICAL VAPOR-DEPOSITION von KHAN, MA, SKOGMAN, RA, VANHOVE, JM, OLSON, DT, KUZNIA, JN

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Creation of high resistivity GaN by implantation of Ti, O, Fe, or Cr von Cao, X. A., Pearton, S. J., Dang, G. T., Zhang, A. P., Ren, F., Wilson, R. G., Van Hove, J. M.

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Bias-assisted photoelectrochemical etching of p-GaN at 300 K von Borton, J. E., Cai, C., Nathan, M. I., Chow, P., Van Hove, J. M., Wowchak, A., Morkoc, H.

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High electron mobility GaN/AlxGa1-xN heterostructures grown by low-pressure metalorganic chemical vapor deposition von ASIF KHAN, M, VAN HOVE, J. M, KUZNIA, J. N, OLSON, D. T

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A study of the electrical characteristics of various metals on p-type GaN for ohmic contacts von FUNG, A. K, BORTON, J. E, NATHAN, M. I, VAN HOVE, J. M, HICKMAN, R. II, CHOW, P. P, WOWCHAK, A. M

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Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy von Van Hove, J. M., Hickman, R., Klaassen, J. J., Chow, P. P., Ruden, P. P.

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Vertical-cavity, room-temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low-pressure metalorganic chemical vapor deposition von Khan, M. Asif, Olson, D. T., Van Hove, J. M., Kuznia, J. N.

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GaN n- and p-type Schottky diodes: Effect of dry etch damage von Cao, X.A., Pearton, S.J., Dang, G.T., Zhang, A.P., Ren, F., Van Hove, J.M.

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Plasma damage in p-GaN von Cao, X. A., Zhang, A. P., Dang, G. T., Ren, F., Pearton, S. J., van Hove, J. M., Hickman, R. A., Shul, R. J., Zhang, L.

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Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wells von KHAN, M. A, SKOGMAN, R. A, VAN HOVE, J. M, KRISHNANKUTTY, S, KOLBAS, R. M

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High temperature characteristics of GaN-based heterojunction bipolar transistors and bipolar junction transistors von Cao, X.A, Van Hove, J.M, Klaassen, J.J, Polley, C.J, Wowchack, A.M, Chow, P.P, King, D.J, Ren, F, Dang, G, Zhang, A.P, Abernathy, C.R, Pearton, S.J

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Simulation of GaN/AlGaN heterojunction bipolar transistors: part I – npn structures von Cao, X.A, Van Hove, J.M, Klaassen, J.J, Polley, C.J, Wowchak, A.M, Chow, P.P, King, D.J, Zhang, A.P, Dang, G, Monier, C, Pearton, S.J, Ren, F

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Effect of thermal stability of GaN epi-layer on the Schottky diodes von Lee, K.N, Cao, X.A, Abernathy, C.R, Pearton, S.J, Zhang, A.P, Ren, F, Hickman, R, Van Hove, J.M

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Simulation of GaN/AlGaN heterojunction bipolar transistors: part II – pnp structures von Cao, X.A, Van Hove, J.M, Klaassen, J.J, Polley, C.J, Wowchak, A.M, Chow, P.P, King, D.J, Zhang, A.P, Dang, G, Monier, C, Pearton, S.J, Ren, F

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